High-performance few-layer Mo-doped ReSe 2 nanosheet photodetectors

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Yang, Shengxue ^a   Tongay, Sefaattin ^b   Yue, Qu ^c   Li, Yongtao ^a   Li, Bo ^a   Lu, Fangyuan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b Arizona State University   (United States)

^c NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84903450176     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep05442     Document Type: Article

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