Flat-lying semiconductor-insulator interfacial layer in DNTT thin films

ACS Applied Materials and Interfaces

Volumn 7, Issue 3, 2015, Pages 1833-1840

  Jung, Min Cherl ^a   Leyden, Matthew R ^a   Nikiforov, Gueorgui O ^a   Lee, Michael V ^a   Lee, Han Koo ^b   Shin, Tae Joo ^b   Takimiya, Kazuo ^c   Qi, Yabing ^a  

^a OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY GRADUATE UNIVERSITY   (Japan)

^b POSTECH   (South Korea)

^c RIKEN Center for Emergent Matter Science   (Japan)

Author keywords

AFM; DNTT; GIXD; NEXAFS; vacuum evaporation

Indexed keywords

CARRIER MOBILITY; CRYSTAL ORIENTATION; EVAPORATION; GATE DIELECTRICS; SEMICONDUCTING ORGANIC COMPOUNDS; THERMAL EVAPORATION; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VACUUM EVAPORATION;

AFM; CONDUCTING CHANNELS; DEVICE PERFORMANCE; DIELECTRIC INTERFACE; DNTT; GIXD; NEXAFS; SEMICONDUCTOR-INSULATOR INTERFACE;

INTERFACES (MATERIALS);

EID: 84921738087     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am507528e     Document Type: Article

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