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Volumn 96, Issue 13, 2010, Pages

Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors

(3) Hu, Yuanyuan a,b Qi, Qiong a Jiang, Chao a

a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE; GRAIN SIZE; MICROSCOPIC MEASUREMENT; MOBILITY MODEL; PENTACENE FILM; PENTACENE THIN-FILM TRANSISTORS; PENTACENES; SUBMONOLAYER FILMS; SURFACE ENERGIES; THERMAL OXIDES;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MONOLAYERS; POLYSTYRENES; SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE TENSION; THIN FILM TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 77950509326 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3374887 Document Type: Article

Times cited : (37)

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