Bias stress effect in "air-gap" organic field-effect transistors

Advanced Materials

Volumn 24, Issue 20, 2012, Pages 2679-2684

  Chen, Y ^a,b   Podzorov, V ^a,b  

^a RUTGERS UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

bias stress effect; field effect transistor; organic single crystal

Indexed keywords

AIR-GAPS; BIAS STRESS; BOUND STATE; CARRIER TRAPPING; DENSITY OF TRAP STATE; MOLECULAR DIPOLE; MOLECULAR VAPORS; ORGANIC SINGLE CRYSTALS; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR PROPERTIES; SIGNIFICANT IMPACTS; THEORETICAL MODELS;

GATE DIELECTRICS;

ORGANIC FIELD EFFECT TRANSISTORS;

FULLERENE DERIVATIVE; NAPHTHACENE DERIVATIVE; PRISTINE (C60); RUBRENE;

AIR; ARTICLE; CHEMISTRY; CRYSTALLIZATION; SEMICONDUCTOR; THEORETICAL MODEL;

AIR; CRYSTALLIZATION; FULLERENES; MODELS, THEORETICAL; NAPHTHACENES; TRANSISTORS, ELECTRONIC;

EID: 84861118869     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201200455     Document Type: Article

References (24)

1. H. Sirringhaus, Adv. Mater. 2009, 21, 3859.
2. S. J. Zilker, C. Detcheverry, E. Cantatore, D. M. de Leeuw, Appl. Phys. Lett. 2001, 79, 1124.
3. T. Richards, H. Sirringhaus, Appl. Phys. Lett. 2008, 92, 023512.
4. A. Sharma, S. G. J. Mathijssen, E. C. P. Smits, M. Kemerink, D. M. de Leeuw, P. A. Bobbert, Phys. Rev. B 2010, 82, 075322.
5. A. Salleo, R. A. Street, J. Appl. Phys. 2003, 94, 471.
6. B. Lee, A. Wan, D. Mastrogiovanni, J. E. Anthony, E. Garfunkel, V. Podzorov, Phys. Rev. B 2010, 82, 085302.
7. P. A. Bobbert, A. Sharma, S. G. J. Mathijssen, M. Kemerink, D. M. de Leeuw, Adv. Mater. 2012, 24, 1146.
8. V. Podzorov, E. Menard, A. Borissov, V. Kriyukhin, J. A. Rogers, M. E. Gershenson, Phys. Rev. Lett. 2004, 93, 086602.
9. E. Menard, V. Podzorov, S.-H. Hur, A. Gaur, M. E. Gershenson, J. A. Rogers, Adv. Mater. 2004, 16, 2097.
10. H. Najafov, D. Mastrogiovanni, E. Garfunkel, L. C. Feldman, V. Podzorov, Adv. Mater. 2011, 23, 981.
11. B. Lee, B. Yakshinsky, V. Podzorov, in preparation.
12. A. Sharma, S. G. J. Mathijssen, T. Cramer, M. Kemerink, D. M. de Leeuw, P. A. Bobbert, Appl. Phys. Lett. 2010, 96, 103306.
13. J. Rivnay, R. Noriega, J. E. Northrup, R. J. Kline, M. F. Toney, A. Salleo, Phys. Rev. B 2011, 83, 121306(R).
14. S. Haas, A. F. Stassen, G. Schuck, K. P. Pernstich, D. J. Gundlach, B. Batlogg, U. Berens, H. J. Kirner, Phys. Rev. B 2007, 76, 115203.
15. G. Horowitz, J. Mater. Res. 2004, 19, 1946.
16. V. Podzorov, V. M. Pudalov, M. E. Gershenson, Appl. Phys. Lett. 2003, 82, 1739.
17. V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, M. E. Gershenson, J. A. Rogers, Science 2004, 303, 1644.
18. V. Podzorov, E. Menard, J. A. Rogers, M. E. Gershenson, Phys. Rev. Lett. 2005, 95, 226601.
19. J. Takeya, K. Tsukagoshi, Y. Aoyagi, T. Takenobu, Y. Iwasa, Jpn. J. Appl. Phys. 2005, 44, L1393.
20. A. Troisi, Adv. Mater. 2007, 19, 2000.
21. D. Monroe, Phys. Rev. Lett. 1985, 54, 146.
22. R. Schmechel, H. von Seggern, Phys. Status Solidi A 2004, 201, 1215.
23. B. Crone, A. Dodabalapur, A. Gelperin, L. Torsi, H. E. Katz, A. J. Lovinger, Z. Bao, Appl. Phys. Lett. 2001, 78, 2229.
24. V. Podzorov, E. Menard, S. Pereversev, B. Yakshinksy, T. Madey, J. A. Rogers, M. E. Gershenson, Appl. Phys. Lett. 2005, 87, 093505.