The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

Applied Physics Letters

Volumn 104, Issue 6, 2014, Pages

  Ok, Kyung Chul ^a   Ko Park, Sang Hee ^b   Hwang, Chi Sun ^c   Kim, H ^b,e   Soo Shin, Hyun ^d   Bae, Jonguk ^d   Park, Jin Seong ^a  

^a Hanyang University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d LG Display Co Ltd   (South Korea)

^e Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; BUFFER LAYERS; GALLIUM ALLOYS; INDIUM; POLYIMIDES; SILICON NITRIDE; SUBSTRATES; THIN FILMS;

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; DEVICE PERFORMANCE; HIGH TEMPERATURE; HYDROGEN DIFFUSION BARRIERS; NEGATIVE BIAS; POLYIMIDE SUBSTRATE; RADIUS OF CURVATURE; THERMAL-ANNEALING;

THIN FILM TRANSISTORS;

EID: 84920139102     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4864617     Document Type: Article

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