Effects of mechanical strains on the characteristics of top-gate staggered a-IGZO thin-film transistors fabricated on polyimide-based nanocomposite substrates

IEEE Transactions on Electron Devices

Volumn 59, Issue 7, 2012, Pages 1956-1962

  Lin, Chang Yu ^a   Chien, Chih Wei ^a   Wu, Chung Chih ^a   Yeh, Yung Hui ^b   Cheng, Chun Cheng ^b   Lai, Chih Ming ^b   Yu, Ming Jiue ^b   Leu, Chyi Ming ^b,c   Lee, Tzong Ming ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

In Ga Zn O; mechanical strain; nanocomposite; polyimide (PI); thin film transistors (TFTs)

Indexed keywords

BENDING RADIUS; ETCHING PROCESS; GLASS CARRIER; IN-GA-ZN-O; MASS FABRICATION; MECHANICAL STRAIN; PI FILM; PLASTIC SUBSTRATES; RADII OF CURVATURE; RELEASE LAYER; THIN-FILM TRANSISTOR (TFTS); TRANSPARENT POLYIMIDES;

CARRIER MOBILITY; FABRICATION; GALLIUM; GLASS; NANOCOMPOSITE FILMS; NANOCOMPOSITES; POLYIMIDES; STRAIN; SUBSTRATES; THIN FILM TRANSISTORS; ZINC;

GALLIUM ALLOYS;

EID: 84862673991     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2193585     Document Type: Article

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