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Journal of Applied Physics

Volumn 114, Issue 16, 2013, Pages

Suspended single-layer MoS2 devices

(5) Jin, Taiyu a Kang, Jinyeong b Su Kim, Eok c Lee, Sunhee c Lee, Changgu a,b

a Sungkyunkwan University (South Korea)

b Sungkyunkwan University (South Korea)

c SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFERED OXIDE ETCHANTS; E-BEAM LITHOGRAPHY; ON/OFF RATIO; OPTIMAL DEVICES; SINGLE LAYER; SUBSTRATE EFFECTS;

ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; MOLYBDENUM COMPOUNDS;

SUBSTRATES;

EID: 84887278598 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4827477 Document Type: Article

Times cited : (64)

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