Growth of large-scale and thickness-modulated MoS2 nanosheets

ACS Applied Materials and Interfaces

Volumn 6, Issue 23, 2014, Pages 21215-21222

  Choudhary, Nitin ^a   Park, Juhong ^a   Hwang, Jun Yeon ^b   Choi, Wonbong ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

field effect transistors; MoS2; PVD CVD; thin films

Indexed keywords

AMORPHOUS SILICON; ELECTRIC FIELD EFFECTS; ENERGY GAP; FILM PREPARATION; FLEXIBLE ELECTRONICS; LAYERED SEMICONDUCTORS; MODULATION; MOLYBDENUM COMPOUNDS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; QUALITY CONTROL; SILICON COMPOUNDS; SILICON WAFERS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS SILICON (A-SI); ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL MEASUREMENT; FIELD EFFECT TRANSISTOR (FETS); FIELD-EFFECT MOBILITIES; MICRO-FABRICATION TECHNOLOGY; MOS2; WAFER SCALE FABRICATION;

FIELD EFFECT TRANSISTORS;

EID: 84917706298     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am506198b     Document Type: Article

References (52)

1. Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
2. 2 ACS Appl. Mater. Interfaces 2014, 6, 314-318
3. Wang, Q. H.; Zadeh, K. K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
4. 2 Phototransistors ACS Nano 2012, 6, 74-80
5. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200
6. Palacios, T. Graphene Electronics: Thinking outside the Silicon Box Nat. Nanotechnol. 2011, 6, 464-465
7. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
8. 2 by Plasma ACS Nano 2013, 7, 4202-4209
9. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451-10453
10. 2 Transistors Nano Lett. 2012, 12, 4674-4680
11. Jena, D.; Konar, A. Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering Phys. Rev. Lett. 2007, 98, 136805
12. 2 Crystals Nat. Commun. 2012, 3, 1011
13. 2-Te Composite Target Cryst. Growth Des. 2008, 8, 2603-2605
14. 2 Layers Using Graphene as Growth Templates Nano Lett. 2012, 12, 2784-2791
15. 2 Films Nano-Micro Lett. 2013, 5, 135-139
16. Parilla, P. A.; Dillon, A. C.; Parkinson, B. A.; Jones, K. M.; Alleman, J.; Riker, G.; Ginley, D. S.; Heben, M. J. Formation of Nanooctahedra in Molybdenum Disulfide and Molybdenum Diselenide Using Pulsed Laser Vaporization J. Phys.Chem. B 2004, 108, 6197-6207
17. 3 Films by Oxygen Plasma Assisted Molecular Beam Thin Solid Films 2002, 414, 205-215
18. Chen, X.; Fan, R. Low-Temperature Hydrothermal Synthesis of Transition Metal Dichalcogenides Chem. Mater. 2001, 13, 802-805
19. 2 Chem. Lett. 2001, 30, 772-773
20. 2 Analogues of Graphene Angew. Chem., Int. Ed. 2010, 49, 4059-4062
21. Reina, A.; Jia, X.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition Nano Lett. 2009, 9, 30-35
22. Ci, L.; Song, L.; Jin, C. H.; Jariwala, D.; Wu, D. X.; Li, Y. J.; Srivastava, A.; Wang, Z. F.; Storr, K.; Balicas, L.; Liu, F.; Ajayan, P. M. Atomic Layers of Hybridized Boron Nitride and Graphene Domains Nat. Mater. 2010, 9, 430-435
23. Najmaei, S.; Liu, Z.; Zhou, W.; Zou, X.; Shi, G.; Lei, S.; Yakobson, B. I.; Idrobo, J.-C.; Ajayan, P. M.; Lou, J. Vapour Phase Growth and Grain Boundary Structure of Molybdenum Disulphide Atomic Layers Nat. Mater. 2013, 12, 754-759
24. 3 Nanobelts and S Chem.-Eur. J. 2003, 9, 2726-2731
25. 2 via a Two Step Thermal Evaporation-Exfoliation Method Nanoscale 2012, 4, 461-466
26. 2 Substrate Small 2012, 8, 966-971
27. 2 Films Sci. Rep. 2013, 3, 1866
28. Zeng, Z.; Yin, Z.; Huang, X.; Li, H.; He, Q.; Lu, G.; Boey, F.; Zhang, H. Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication Angew. Chem., Int. Ed. 2011, 50, 11093-11097
29. 2 ACS Nano 2010, 4, 2695-2700
30. 3 Sulfurization Nanoscale 2012, 4, 6637-6641
31. 2: Evolution of Raman Scattering Adv. Funct. Mater. 2012, 22, 1385-1390
32. 2 Appl. Phys. Lett. 2013, 102, 252108
33. 2 Hybrid Nanoflakes Sci. Rep. 2014, 4, 5575
34. 2 Nanosheets Acc. Chem. Res. 2014, 47, 1067-1075
35. 2 Nanosheets ACS Appl. Mater. Interfaces 2014, 6, 7084-7089
36. Venables, J. A. Introduction to Surface and Thin Film Processes, 4th ed.; Cambridge University Press: Cambridge, U.K., 2000.
37. x Contacts Nano Lett. 2014, 14, 1337-1342
38. 2 Substrate Phys. Rev. B 2013, 87, 165402
39. 2 Monolayers: An ab Initio Study Phys. Rev. B 2013, 88, 075420
40. 2 Monolayers Appl. Phys. Lett. 2010, 96, 082504
41. 2 Honeycomb Structures J. Phys. Chem. C 2011, 115, 13303-13311
42. 2 (0001) Surface Phys. Rev. Lett. 2004, 92, 026802
43. Aleshin, A. N.; Lee, J. Y.; Chu, S. W.; Kim, J. S.; Park, Y. M. Mobility Studies of Field-Effect Transistor Structures Based on Anthracene Single Crystals Appl. Phys. Lett. 2004, 84, 5383-5385
44. 2 Atomic Layers with Chemical Vapor Deposition Adv. Mater. 2012, 24, 2320-2325
45. 2 Thin Layers on Insulating Substrates Nano Lett. 2012, 12, 1538-1544
46. 2 Transistors with Polymer Electrolyte J. Phys. D: Appl. Phys. 2012, 45, 345102
47. 2 Monolayer Adv. Mater. 2013, 25, 3456-3461
48. 2 Grains Appl. Phys. Lett. 2013, 102, 142106
49. 2/V s for Holes Appl. Phys. Lett. 2009, 94, 162105
50. Poortmans, J.; Arkhipov, V. Thin Film Solar Cells: Fabrication, Characterization and Applications, 1st ed.; John Wiley & Sons: New York, 2006.
51. Lin, Y.-Y.; Gundlach, D. J.; Nelson, S. F.; Jackson, T. N. Stacked Pentacene Layer Organic Thin-Film Transistors with Improved Characteristics IEEE Electron Device Lett. 1997, 18, 606-608
52. -1 Adv. Mater. 2013, 25, 1165-1169