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Volumn 10, Issue 20, 2014, Pages 4213-4218

Graphene field effect transistors with mica as gate dielectric layers

(4) Low, Chong Guan a Zhang, Qing a Hao, Yufeng b,c Ruoff, Rodney S b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b The University of Texas at Austin (United States)

c Department of Earth and Environmental Sciences (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; GATE DIELECTRICS; GRAPHENE; MICA; STRENGTH OF MATERIALS;

ATOMICALLY FLAT SURFACE; CHEMICAL VAPOR DEPOSITED; EFFECTIVE CARRIER MOBILITY; GATE DIELECTRIC LAYERS; GRAPHENE FIELD-EFFECT TRANSISTORS; GRAPHENE FIELDEFFECT TRANSISTORS (GFET); HIGH DIELECTRIC CONSTANTS; TRANSPORT CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 84912539499 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.201303929 Document Type: Article

Times cited : (34)

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