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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

Impact of post-growth thermal annealing and environmental exposure on the unintentional doping of CVD graphene films

(4) Sojoudi, Hossein a Baltazar, Jose b Henderson, Clifford b Graham, Samuel a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DESORPTION; ELECTRIC FIELD EFFECTS; GRAPHENE; OXYGEN; VACUUM; VAPORS;

AS-GROWN FILMS; BLUE SHIFT; COOLING CYCLE; DIRAC POINT; DOPING EFFECTS; ELECTRICAL MEASUREMENT; ENVIRONMENTAL EXPOSURE; FIELD EFFECTS; GRAPHENE DEVICES; IN-SITU; IN-VACUUM; KELVIN PROBE MEASUREMENTS; P-DOPING; POSTGROWTH THERMAL ANNEALING; RAMAN PEAK; RAMAN RESPONSE; ROOM TEMPERATURE; UNINTENTIONAL DOPING; VACUUM-ANNEALING;

SEMICONDUCTOR DOPING;

EID: 84864244462 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.4731472 Document Type: Article

Times cited : (56)

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