Graphene oxide as a promising hole injection layer for MoS2-based electronic devices

ACS Nano

Volumn 8, Issue 11, 2014, Pages 11432-11439

  Musso, Tiziana ^a   Kumar, Priyank V ^b   Foster, Adam S ^a   Grossman, Jeffrey C ^b  

^a AALTO UNIVERSITY   (Finland)

^b Massachusetts Institute of Technology   (United States)

Author keywords

DFT; Graphene oxide; Hole injection layer; MoS2; p type FET; Schottky barrier

Indexed keywords

ELECTRON INJECTION; FERMI LEVEL; GRAPHENE DEVICES; GRAPHENE OXIDE; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SUBSTRATES; TRANSITION METALS;

EPOXY FUNCTIONAL GROUPS; HOLE INJECTION LAYERS; MOS2; P-TYPE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SEMI-CONDUCTING PROPERTY; TRANSITION METAL DICHALCOGENIDES;

GRAPHENE;

EID: 84912535665     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn504507u     Document Type: Article

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