Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application

Solar Energy

Volumn 110, Issue , 2014, Pages 595-602

  Khan, Firoz ^a   Baek, Seong Ho ^a   Singh, S N ^b   Singh, P K ^b   Husain, M ^c,d   Kim, Jae Hyun ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c M J P ROHILKHAND UNIVERSITY   (India)

^d JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

Author keywords

Al rich zinc oxide; Passivating layers; Silicon solar cells; Surface recombination velocity

Indexed keywords

CARRIER LIFETIME; HYDROGEN; OPTICAL PROPERTIES; OXIDE FILMS; PASSIVATION; SILICON; SILICON SOLAR CELLS; SINTERING; SOLAR POWER GENERATION; ZINC; ZINC OXIDE; ALUMINUM;

ELECTRICAL AND OPTICAL PROPERTIES; MINORITY CARRIER LIFETIMES; MOLAR CONCENTRATION RATIO; PASSIVATING LAYER; PASSIVATION EFFECT; SOLAR-CELL APPLICATIONS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

ALUMINUM; SILICON SOLAR CELLS;

ALUMINUM; FUEL CELL; HYDROGEN; RENEWABLE RESOURCE; SILICON; SOLAR POWER; ZINC; CHEMISTRY; ENERGY EFFICIENCY; OPTICAL PROPERTY;

EID: 84910622045     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2014.08.035     Document Type: Article

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