Effect of Al concentration on photoluminescence properties of sol-gel derived hydrogen annealed ZnO

Metals and Materials International

Volumn 19, Issue 2, 2013, Pages 245-250

  Khan, Firoz ^a   Ameen, Sadia ^a   Song, Minwu ^a   Husain, Mushahid ^b   Mobin, Abdul ^c   Shin, Hyung Shik ^a  

^a Chonbuk National University   (South Korea)

^b JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

^c NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

annealing; chemical synthesis; coating; thin films; X ray diffraction

Indexed keywords

ALUMINUM METALLOGRAPHY; ANNEALING; ATOMS; BLUE SHIFT; COATINGS; HYDROGEN; II-VI SEMICONDUCTORS; OPTICAL FILMS; OXIDE MINERALS; PHOTOLUMINESCENCE; SOL-GELS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

AL-CONCENTRATION; ATOMIC RATIO; CRYSTAL QUALITIES; GREEN REGIONS; LUMINESCENT CENTERS; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; XRD MEASUREMENTS;

ALUMINUM;

EID: 84879631167     PISSN: 15989623     EISSN: 20054149     Source Type: Journal    
DOI: 10.1007/s12540-013-2019-9     Document Type: Article

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