The evolution investigation of photoluminescence from a-Si:H/SiO 2 to nc-Si/SiO2 multilayers

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2448-2451

  Ma, Zhongyuan ^a   Chen, Kunji ^a   Huang, Xinfan ^a   Xu, Jun ^a   Li, Wei ^a   Sui, Yanping ^a   Zhu, Da ^a   Mei, Jiaxin ^a   Feng, Duan ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; DEHYDROGENATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MICROSTRUCTURE; MULTILAYERS; PHOTOOXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SILICA; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); RADIATIVE RECOMBINATION (RR);

PHOTOLUMINESCENCE;

EID: 1642371453     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1646443     Document Type: Article

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