Enhanced performance of silicon solar cells by application of low-cost sol-gel-derived Al-rich ZnO film

Solar Energy

Volumn 101, Issue , 2014, Pages 265-271

  Khan, Firoz ^a   Baek, Seong Ho ^a   Mobin, Abdul ^b   Kim, Jae Hyun ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

Al rich zinc oxide; Passivating layers; Silicon solar cells; Surface recombination velocity

Indexed keywords

AL BACK SURFACE FIELDS; BACK-SURFACE RECOMBINATION VELOCITY; EFFECTIVE DIFFUSION LENGTH; INTERNAL QUANTUM EFFICIENCY; J-V CHARACTERISTICS; PASSIVATING LAYER; PERC SOLAR CELLS; SURFACE RECOMBINATION VELOCITIES;

ALUMINUM; ANTIREFLECTION COATINGS; HYDROGEN; OPTICAL FILMS; PASSIVATION; SILICON NITRIDE; SOL-GEL PROCESS; SOL-GELS; ZINC OXIDE;

SILICON SOLAR CELLS;

ALUMINUM; ANNEALING; CRYSTAL STRUCTURE; ENERGY EFFICIENCY; GEL; QUANTUM MECHANICS; SILICON; SOLAR POWER; SOLAR RADIATION; ZINC;

EID: 84892865686     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2013.12.025     Document Type: Article

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