Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2014, Pages

  Raghavan, Nagarajan ^a   Pey, Kin Leong ^a   Frey, Daniel D ^b   Bosman, Michel ^c  

^a SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Endurance; Filament; Oxygen vacancy; Percolation; Reset; Thermochemical model

Indexed keywords

ACTIVATION ENERGY; COMPLIANT MECHANISMS; DATA STORAGE EQUIPMENT; DURABILITY; FILAMENTS (LAMP); IONS; LOGIC GATES; MOLECULAR BIOLOGY; OXYGEN; OXYGEN VACANCIES; PERCOLATION (SOLID STATE); RANDOM ACCESS STORAGE; SOLVENTS; STOCHASTIC SYSTEMS;

DIELECTRIC THICKNESS; FILAMENT TEMPERATURE; HIGH-RESISTANCE STATE; NONVOLATILE MEMORY DEVICES; PERFORMANCE METRICES; RANDOM ACCESS MEMORY; RESET; THERMOCHEMICAL MODELING;

STOCHASTIC MODELS;

EID: 84905656766     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2014.6861163     Document Type: Conference Paper

References (20)

1. H.T. Lue, T.H. Hsu, Y.H. Hsiao, S.P. Hong, M.T. Wu, F.H. Hsu, N.Z. Lien, S.Y, Wang, J.Y. Hsieh, L.W. Yang, T. Yang, K.C. Chen, K.Y. Hsieh and C.Y. Lu, "A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND flash using junction-free buried channel BE-SONOS device", 2010 Symposium on VLSI Technology (VLSIT), pp. 131-132, (2010).
2. E.S. Choi, H.S. Yoo, H.S. Joo, G.S. Cho, S.K. Park and S.K. Lee, "A novel 3D cell array architecture for terra-bit NAND flash memory", 3rd IEEE International Memory Workshop (IMW), pp. 1-4, (2011).
3. T.R. Oldham, M.R. Friendlich, H.S. Kim, M.D. Berg, K.A. LaBel, S.P. Buchner, D. McMorrow, D.G. Mavis, P.H. Eaton and J. Castillo, "Radiation and reliability concerns for modern non-volatile memory technology", (2011).
4. Y.S. Shin, "Non-volatile memory technologies for beyond 2010", IEEE Symposium on VLSI Circuits, pp. 156-159, (2005).
5. W. Zhao, T. Lionel, G. Yoann, C.V. Luís, L. Yahya, K.O. Jacques, R. Dafine, S. Gilles and C. Claude, "Design of MRAM based logic circuits and its applications", Proceedings of the 21st edition of the Great Lakes Symposium on VLSI, pp. 431-436. ACM, (2011).
6. H. Akinaga and H. Shima, "Resistive random access memory (ReRAM) based on metal oxides", Proceedings of the IEEE, Vol. 98, No. 12, pp. 2237-2251, (2010).
7. B. Chen, Y. Lu, B. Gao, Y.H. Fu, F.F. Zhang, P. Huang, Y.S. Chen, L.F. Liu, X.Y. Liu, J.F. Kang, Y.Y. Wang, Z. Fang, H.Y. Yu, X. Li, X.P. Wang, N. Singh, G.Q. Lo and D.L. Kwong, "Physical mechanisms of endurance degradation in TMO-RRAM", IEEE International Electron Devices Meeting (IEDM), pp.283-286, (2011).
8. Y.Y. Chen, R. Degraeve, S. Clima, B. Govoreanu, L. Goux, A. Fantini, G.S. Kar, G. Pourtois, G. Groeseneken, D.J. Wouters and M. Jurczak, "Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation", IEEE International Electron Devices Meeting (IEDM), pp.20.3.1-20.3.4, (2012).
9. B. Chen, J.F. Kang, B. Gao, Y.X. Deng, L.F. Liu, X.Y. Liu, Z. Fang, H.Y. Yu, X.P. Wang, G.Q. Lo and D.L. Kwong, "Endurance degradation in metal oxide-based resistive memory induced by oxygen ion loss effect," IEEE Electron Device Letters, Vol. 34, No. 10, pp. 1292-1294, (2013).
10. B. Gao, H. Zhang, B. Chen, L.F. Liu, X.Y. Liu, R. Han, J.F. Kang, Z. Fang, H.Y. Yu, B. Yu and D.L. Kwong, "Modeling of retention failure behavior in bipolar oxide-based resistive switching memory", IEEE Electron Device Letters, Vol. 32, No. 3, pp. 276-278, (2011).
11. L. Zhang, R. Huang, Y.Y. Hsu, F.T. Chen, H.Y. Lee, Y.S. Chen, W.S. Chen, P.Y. Gu, W.H. Liu, S.M. Wang, C.H. Tsai, M.J. Tsai and P.S. Chen, "Statistical analysis of retention behavior and lifetime prediction of HfOx-based RRAM", IEEE International Reliability Physics Symposium (IRPS), pp. MY.8.1-MY.8.5, (2011).
12. W.C. Luo, J.C. Liu, H.T. Feng, Y.C. Lin, J.J. Huang, K.L. Lin and T.H. Hou, "RRAM SET speed-disturb dilemma and rapid statistical prediction methodology", IEEE International Electron Devices Meeting (IEDM), pp. 9.5.1-9.5.4, (2012).
13. J.H. Stathis, "Percolation models for gate oxide breakdown", Journal of Applied Physics, Vol. 86, No. 10, pp.5757-5766, (1999).
14. J. Suñé, "New physics-based analytic approach to the thin-oxide breakdown statistics", IEEE Electron Device Letters, Vol. 22, No. 6, pp.296-298, (2001).
15. D.B. Strukov and R.S. Williams, "Exponential ionic drift: fast switching and low volatility of thin-film memristors", Applied Physics A, Vol. 94, No. 3, pp.515-519, (2009).
16. S. Yu, Y.Y. Chen, X. Guan, H.S.P. Wong and J.A. Kittl, "A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory", Applied Physics Letters, Vol. 100, No. 4, 043507, (2012).
17. X. Guan, S. Yu and H.S.P. Wong, "On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology", IEEE Transactions on Electron Devices, Vol. 59, No. 4, pp.1172-1182, (2012).
18. K. McKenna and A. Shluger, "The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2", Applied Physics Letters, Vol. 95, No. 22, 222111, (2009).
19. B. Butcher, S. Koveshnikov, D.C. Gilmer, G. Bersuker, M.G. Sung, A. Kalantarian, C. Park, R. Geer, Y. Nishi, P.D. Kirsch and R. Jammy, "High endurance performance of 1T-1R HfOx based RRAM at low (<20μA) operative current and elevated (150°C) temperature IEEE International Integrated Reliability Workshop IIRW 146-150 2011.
20. Fujiwara, T. Nemoto, M.J. Rozenberg, Y. Nakamura and H. Takagi, "Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices", Japanese Journal of Applied Physics (JJAP), Vol. 47, No. 8, pp.6266-6271, (2008).