From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories

2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011

Volumn , Issue , 2011, Pages 26-31

  Suñé, Jordi ^a   Miranda, Enrique ^a   Jiménez, David ^a   Long, Shibing ^b   Liu, Ming ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

dielectric breakdown; non volatile memories; percolation; quantum point contact; Resistive switching; RRAM; switching statistics; threshold switching

Indexed keywords

NON-VOLATILE MEMORIES; QUANTUM POINT CONTACT; RESISTIVE SWITCHING; RRAM; THRESHOLD SWITCHING;

ELECTRIC BREAKDOWN; ELECTROFORMING; PERCOLATION (SOLID STATE); PHASE CHANGE MEMORY; QUANTUM CHEMISTRY; RANDOM ACCESS STORAGE; SOLVENTS; SWITCHING; SWITCHING SYSTEMS;

LEAKAGE CURRENTS;

EID: 84857178092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMTS.2011.6137105     Document Type: Conference Paper

References (14)

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