-
1
-
-
78649340782
-
Resistive random access memory (ReRAM) based on metal oxides
-
December
-
H. Akinaga, H. Shima, "Resistive random access memory (ReRAM) based on metal oxides" Proc. IEEE, vol.98, No. 12, December 2010.
-
(2010)
Proc. IEEE
, vol.98
, Issue.12
-
-
Akinaga, H.1
Shima, H.2
-
2
-
-
84894305895
-
An 8Mb Multi-Layered Cross-Point ReRAM Macro with 443MB/s Write Throughput
-
A. Kawahara et al., "An 8Mb Multi-Layered Cross-Point ReRAM Macro with 443MB/s Write Throughput," ISSCC, pp. 500-502,2012.
-
(2012)
ISSCC
, pp. 500-502
-
-
Kawahara, A.1
-
3
-
-
84903844369
-
Multi-level switching of triple-layered taox rram with excellent reliability for storage class memory
-
S.R. Lee et al., "Multi-level Switching of Triple-layered TaOx RRAM with Excellent Reliability for Storage Class Memory," VLSI Technology, pp. 2011-2012, 2012
-
(2012)
VLSI Technology
, pp. 2011-2012
-
-
Lee, S.R.1
-
4
-
-
0015127532
-
Memristor-The missing circuit element
-
L. O. Chua, "Memristor-The Missing Circuit Element," Transactions on Circuit Theory, vol. CT-18, pp. 507-519, 1971.
-
(1971)
Transactions on Circuit Theory
, vol.CT18
, pp. 507-519
-
-
Chua, L.O.1
-
5
-
-
43049126833
-
The missing memristor found
-
Strukov et al., "The missing memristor found," Nature, vol. 453, pp. 80-83, 2008.
-
(2008)
Nature
, vol.453
, pp. 80-83
-
-
Strukov1
-
6
-
-
84883726018
-
Sb-doped GeS2 as performance and reliability booster in Conductive Bridge RAM
-
E. Vianello et al., "Sb-doped GeS2 as performance and reliability booster in Conductive Bridge RAM,"IEDM, pp.10-12, 2012.
-
(2012)
IEDM
, pp. 10-12
-
-
Vianello, E.1
-
7
-
-
84880987433
-
Investigation of the impact of the oxide thickness and reset conditions on disturb in hfo2-rram integrated in a 65nm cmos technology
-
T. Diokh et al., "Investigation of the Impact of the Oxide Thickness and RESET conditions on Disturb in HfO2-RRAM integrated in a 65nm CMOS Technology," IRPS, 2013.
-
(2013)
IRPS
-
-
Diokh, T.1
-
8
-
-
84903846479
-
Temperature impact (up to 200 c) on performance and reliability of hfo2-based rrams
-
T. Cabout et al., "Temperature impact (up to 200 C) on performance and reliability of HfO2-based RRAMs", proc. of IMW 2013.
-
(2013)
Proc. of IMW
-
-
Cabout, T.1
-
9
-
-
33846603234
-
Performance benefits of monolithically stacked 3-d fpga
-
M. Lin et al., "Performance Benefits of Monolithically Stacked 3-D FPGA," Computer-Aided Design of Integrated Circuits and Systems, IEEE Tran. On, vol. 26, no. 2, pp. 216-229, 2007.
-
(2007)
Computer-Aided Design of Integrated Circuits and Systems, IEEE Tran. on
, vol.26
, Issue.2
, pp. 216-229
-
-
Lin, M.1
-
10
-
-
84860673822
-
Nonvolatile 3d-fpga with monolithically stacked rram-based configuration memory
-
Y.Y. Liauw et al., "Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory," ISSCC, pp. 406-408, 2012.
-
(2012)
ISSCC
, pp. 406-408
-
-
Liauw, Y.Y.1
-
11
-
-
84883429248
-
A hybrid cbram/cmos look-up-table structure for improving performance efficiency of field-programmable-gate-array
-
S. Onkaraiah et al., "A hybrid cbram/cmos look-up-table structure for improving performance efficiency of field-programmable-gate-array," ISCAS, 2013.
-
(2013)
ISCAS
-
-
Onkaraiah, S.1
-
12
-
-
84903850428
-
A novel hfo2/ges2 based conductive bridge ram for non-volatile reconfigurable logic applications
-
G. Palma et al., "A novel HfO2/GeS2 based Conductive Bridge RAM for non-volatile reconfigurable logic applications" ESSDERC, 2013.
-
(2013)
ESSDERC
-
-
Palma, G.1
-
13
-
-
78650368799
-
Sram dedicated pcms for leakage characterization in nanometer cmos technologies
-
S. Léomant, et al., "Sram dedicated pcms for leakage characterization in nanometer cmos technologies," DTIS, pp. 316-32, 2006.
-
(2006)
DTIS
, pp. 316-332
-
-
Léomant, S.1
-
14
-
-
84874788164
-
RRAM-based fpga for normally off, instantly on applications
-
O. Turkyilmaz et al., "RRAM-based FPGA for Normally Off, Instantly On Applications," NanoArch, 2012.
-
(2012)
NanoArch
-
-
Turkyilmaz, O.1
-
15
-
-
50249187802
-
A 15 ns 4 Mb NVSRAM in 0.13 u SONOS technology
-
M. Fliesler et al., "A 15 ns 4 Mb NVSRAM in 0.13 u SONOS technology,"NVSMW, pp. 83-86, 2008.
-
(2008)
NVSMW
, pp. 83-86
-
-
Fliesler, M.1
-
16
-
-
68549087135
-
Nonvolatile magnetic flip-flop for standby-powerfree SoCs
-
Aug
-
N. Sakimura et al., "Nonvolatile magnetic flip-flop for standby-powerfree SoCs," JSCC, vol. 44, no. 8, pp. 2244-2250, Aug. 2009.
-
(2009)
JSCC
, vol.44
, Issue.8
, pp. 2244-2250
-
-
Sakimura, N.1
-
18
-
-
0035273822
-
NV-sram: A nonvolatile sram with backup ferroelectric capacitors
-
Mar
-
T. Miwa et al., "NV-SRAM: A nonvolatile SRAM with backup ferroelectric capacitors," JSCC, vol. 36, no. 3, pp. 522-527, Mar. 2001.
-
(2001)
JSCC
, vol.36
, Issue.3
, pp. 522-527
-
-
Miwa, T.1
-
19
-
-
56549116481
-
Nonvolatile sram cell
-
W. Wang et al., "Nonvolatile SRAM cell," IEDM, pp. 27-30, 2006.
-
(2006)
IEDM
, pp. 27-30
-
-
Wang, W.1
-
20
-
-
84887449625
-
Operation and stability analysis of bipolar oxrram based non-volatile 8t2r sram as solution for information back-up
-
Dec
-
Hraziia et al., "Operation and Stability Analysis of Bipolar OxRRAM Based Non-Volatile 8T2R SRAM as Solution for Information Back-up," ELSEVIER Solid State Electronics, vol. 90, pp. 99-106, Dec 2013.
-
(2013)
ELSEVIER Solid State Electronics
, vol.90
, pp. 99-106
-
-
Hraziia1
-
21
-
-
84861720134
-
Low store energy, low vddmin, 8t2r nonvolatile latch and sram with vertical-stacked resistive memory (memristor) devices for low power mobile applications
-
P. Chiu et al., "Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications," JSCC, vol. 47, no. 6, pp. 1483-1496, 2012.
-
(2012)
JSCC
, vol.47
, Issue.6
, pp. 1483-1496
-
-
Chiu, P.1
-
22
-
-
0036958067
-
Low power integrated scan retention mechanism
-
V. Zyuban et al., "Low Power Integrated Scan Retention Mechanism," ISLPED, pp. 98-102, 2002.
-
(2002)
ISLPED
, pp. 98-102
-
-
Zyuban, V.1
|