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Volumn 3, Issue , 2013, Pages

Ultrafast synaptic events in a chalcogenide memristor

Author keywords

[No Author keywords available]

Indexed keywords

HUMAN; PLASTICITY; SPIKE; STOICHIOMETRY; SYNAPSE; VELOCITY; ARTICLE; BIOMIMETICS; CHEMISTRY; DATA STORAGE DEVICE; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; IMPEDANCE; MATERIALS TESTING; PHYSIOLOGY; SIGNAL PROCESSING;

EID: 84885595461     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep01619     Document Type: Article
Times cited : (361)

References (52)
  • 1
    • 56649089004 scopus 로고    scopus 로고
    • Transistor analogs of emergent iono-neuronal dynamics
    • Rachmuth, G. & Poon, C. S. Transistor analogs of emergent iono-neuronal dynamics. HFSP J. 2, 156-166 (2008).
    • (2008) HFSP J. , vol.2 , pp. 156-166
    • Rachmuth, G.1    Poon, C.S.2
  • 2
    • 80052075159 scopus 로고    scopus 로고
    • Smart connections
    • Strukov, D. B. Smart connections. Nature 476, 403-405 (2011).
    • (2011) Nature , vol.476 , pp. 403-405
    • Strukov, D.B.1
  • 4
  • 5
    • 77951026760 scopus 로고    scopus 로고
    • Nanoscale memristor device as synapse in neuromorphic systems
    • Jo, S. H. et al. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 10, 1297-1301 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 1297-1301
    • Jo, S.H.1
  • 6
    • 79956129424 scopus 로고    scopus 로고
    • Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
    • Seo, K. et al. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device. Nanotechnology 22, 254023 (2011).
    • (2011) Nanotechnology , vol.22 , pp. 254023
    • Seo, K.1
  • 7
    • 77951576344 scopus 로고    scopus 로고
    • Learning abilities achieved by a single solid-state atomic switch
    • Hasegawa, T. et al. Learning abilities achieved by a single solid-state atomic switch. Adv. Mater. 22, 1831-1834 (2010).
    • (2010) Adv. Mater. , vol.22 , pp. 1831-1834
    • Hasegawa, T.1
  • 8
    • 79960642436 scopus 로고    scopus 로고
    • Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
    • Ohno, T. et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat. Mater. 10, 591-595 (2011).
    • (2011) Nat. Mater. , vol.10 , pp. 591-595
    • Ohno, T.1
  • 9
    • 84865788747 scopus 로고    scopus 로고
    • 2S gap-type atomic switch
    • 2S gap-type atomic switch. Adv. Funct. Mater. 20, 3606-3613 (2012).
    • (2012) Adv. Funct. Mater. , vol.20 , pp. 3606-3613
    • Nayak, A.1
  • 10
    • 80053298117 scopus 로고    scopus 로고
    • Short-term memory to long-term memory transition in a nanoscale memristor
    • Chang, T., Jo, S. H. & Lu, W. Short-term memory to long-term memory transition in a nanoscale memristor. ACS nano 5, 7669-7676 (2011).
    • (2011) ACS Nano , vol.5 , pp. 7669-7676
    • Chang, T.1    Jo, S.H.2    Lu, W.3
  • 11
    • 77953483362 scopus 로고    scopus 로고
    • Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions
    • Lai, Q. et al. Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions. Adv. Mater. 22, 2448-2453 (2010).
    • (2010) Adv. Mater. , vol.22 , pp. 2448-2453
    • Lai, Q.1
  • 12
    • 74349110253 scopus 로고    scopus 로고
    • An organic nanoparticle transistor behaving as a biological spiking synapse
    • Alibart, F. et al. An organic nanoparticle transistor behaving as a biological spiking synapse. Adv. Funct. Mater. 20, 330-337 (2010).
    • (2010) Adv. Funct. Mater. , vol.20 , pp. 330-337
    • Alibart, F.1
  • 13
    • 84856720048 scopus 로고    scopus 로고
    • A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing
    • Alibart, F. et al. A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing. Adv. Funct. Mater. 22, 609-616 (2012).
    • (2012) Adv. Funct. Mater. , vol.22 , pp. 609-616
    • Alibart, F.1
  • 14
    • 84856501021 scopus 로고    scopus 로고
    • The memristive magnetic tunnel junction as a nanoscopic synapse-neuron system
    • Krzysteczko, P., Münchenberger, J., Schäfers, M., Reiss, G. & Thomas, A. The memristive magnetic tunnel junction as a nanoscopic synapse-neuron system. Adv. Mater. 24, 762-766 (2012).
    • (2012) Adv. Mater. , vol.24 , pp. 762-766
    • Krzysteczko, P.1    Münchenberger, J.2    Schäfers, M.3    Reiss, G.4    Thomas, A.5
  • 15
    • 84863642379 scopus 로고    scopus 로고
    • Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor
    • Wang, Z. Q. et al. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv. Funct. Mater. 22, 2759-2765 (2012).
    • (2012) Adv. Funct. Mater. , vol.22 , pp. 2759-2765
    • Wang, Z.Q.1
  • 16
    • 79959343819 scopus 로고    scopus 로고
    • Synaptic behaviors of a single metal-oxide-metal resistive device
    • Choi, S.-J. et al. Synaptic behaviors of a single metal-oxide-metal resistive device. Appl. Phys. A 102, 1019-1025 (2011).
    • (2011) Appl. Phys. A , vol.102 , pp. 1019-1025
    • Choi, S.-J.1
  • 18
    • 0032535029 scopus 로고    scopus 로고
    • Synaptic modifications in cultured hippocampal neurons: Dependence on spike timing, synaptic strength, and postsynaptic cell type
    • Bi, G. Q. & Poo, M. M. Synaptic modifications in cultured hippocampal neurons: dependence on spike timing, synaptic strength, and postsynaptic cell type. J. Neurosci. 18, 10464-10472 (1998).
    • (1998) J. Neurosci. , vol.18 , pp. 10464-10472
    • Bi, G.Q.1    Poo, M.M.2
  • 19
    • 48249085332 scopus 로고    scopus 로고
    • Spike timing-dependent plasticity: A Hebbian learning rule
    • Caporale, N. & Dan, Y. Spike timing-dependent plasticity: a Hebbian learning rule. Annu. Rev. Neurosci. 31, 25-46 (2008).
    • (2008) Annu. Rev. Neurosci. , vol.31 , pp. 25-46
    • Caporale, N.1    Dan, Y.2
  • 20
    • 34547756344 scopus 로고    scopus 로고
    • Hebbian STDP in mushroom bodies facilitates the synchronous flow of olfactory information in locusts
    • Cassenaer, S. & Laurent, G. Hebbian STDP in mushroom bodies facilitates the synchronous flow of olfactory information in locusts. Nature 448, 709-713 (2007).
    • (2007) Nature , vol.448 , pp. 709-713
    • Cassenaer, S.1    Laurent, G.2
  • 21
    • 79955547344 scopus 로고    scopus 로고
    • Phase-changememories on a diet
    • Salinga, M. & Wuttig, M. Phase-changememories on a diet. Science 332, 543-544 (2011).
    • (2011) Science , vol.332 , pp. 543-544
    • Salinga, M.1    Wuttig, M.2
  • 22
    • 79959348340 scopus 로고    scopus 로고
    • Artificial cognitive memory-changing from density driven to functionality driven
    • Shi, L. et al. Artificial cognitive memory-changing from density driven to functionality driven. Appl. Phys. A 102, 865-875 (2011).
    • (2011) Appl. Phys. A , vol.102 , pp. 865-875
    • Shi, L.1
  • 23
    • 36049053305 scopus 로고
    • Reversible electrical switching phenomena in disordered structures
    • Ovshinsky, S. R. Reversible electrical switching phenomena in disordered structures. Phys. Rev. Lett. 21, 1450-1453 (1968).
    • (1968) Phys. Rev. Lett. , vol.21 , pp. 1450-1453
    • Ovshinsky, S.R.1
  • 24
    • 16244390885 scopus 로고    scopus 로고
    • Phase-change materials: Towards a universal memory?
    • Wuttig, M. Phase-change materials: Towards a universal memory? Nat. Mater. 4, 265-266 (2005).
    • (2005) Nat. Mater. , vol.4 , pp. 265-266
    • Wuttig, M.1
  • 25
    • 77950580500 scopus 로고    scopus 로고
    • Phase change memory technology
    • Burr, G. W. et al. Phase change memory technology. J. Vac. Sci. Techno. B 28, 223-262 (2010).
    • (2010) J. Vac. Sci. Techno. B , vol.28 , pp. 223-262
    • Burr, G.W.1
  • 26
    • 80051694093 scopus 로고    scopus 로고
    • Arithmetic and biologically-inspired computing using phase-change materials
    • Wright, C. D., Liu, Y., Kohary, K. I., Aziz, M. M. & Hicken, R. J. Arithmetic and biologically-inspired computing using phase-change materials. Adv. Mater. 23, 3408-3413 (2011).
    • (2011) Adv. Mater. , vol.23 , pp. 3408-3413
    • Wright, C.D.1    Liu, Y.2    Kohary, K.I.3    Aziz, M.M.4    Hicken, R.J.5
  • 27
    • 84861089198 scopus 로고    scopus 로고
    • Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
    • Kuzum, D., Jeyasingh, R. G. D., Lee, B. & Wong, H.-S. P. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett. 12, 2179-2186 (2012).
    • (2012) Nano Lett. , vol.12 , pp. 2179-2186
    • Kuzum, D.1    Jeyasingh, R.G.D.2    Lee, B.3    Wong, H.-S.P.4
  • 28
    • 84866367657 scopus 로고    scopus 로고
    • Physical aspects of low power synapses based on phase change memory devices
    • Suri, M. et al. Physical aspects of low power synapses based on phase change memory devices. J. Appl. Phys. 112, 054904 (2012).
    • (2012) J. Appl. Phys. , vol.112 , pp. 054904
    • Suri, M.1
  • 30
    • 3242892591 scopus 로고    scopus 로고
    • Field-induced resistive switching in metal-oxide interfaces
    • Tsui, S. et al. Field-induced resistive switching in metal-oxide interfaces. Appl. Phys. Lett. 85, 317-319 (2004).
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 317-319
    • Tsui, S.1
  • 31
    • 58149239895 scopus 로고    scopus 로고
    • Electric-field-induced submicrosecond resistive switching
    • Das, N., Tsui, S., Xue, Y., Wang, Y. & Chu, C. Electric-field-induced submicrosecond resistive switching. Phys. Rev. B 78, 235418 (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 235418
    • Das, N.1    Tsui, S.2    Xue, Y.3    Wang, Y.4    Chu, C.5
  • 32
    • 33745386456 scopus 로고    scopus 로고
    • 3/Pt heterostructures
    • 3/Pt heterostructures. Phys. Rev. B 73, 245427 (2006).
    • (2006) Phys. Rev. B , vol.73 , pp. 245427
    • Shang, D.S.1
  • 33
    • 36149017207 scopus 로고
    • Space-charge-limited currents in solids
    • Rose, A. Space-charge-limited currents in solids. Phys. Rev. 97, 1538-1544 (1955).
    • (1955) Phys. Rev. , vol.97 , pp. 1538-1544
    • Rose, A.1
  • 34
    • 33750187879 scopus 로고    scopus 로고
    • Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes
    • Kim, K. M., Choi, B. J., Jeong, D. S., Hwang, C. S. & Han, S. Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes. Appl. Phys. Lett. 89, 162912 (2006).
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 162912
    • Kim, K.M.1    Choi, B.J.2    Jeong, D.S.3    Hwang, C.S.4    Han, S.5
  • 37
    • 33846678198 scopus 로고    scopus 로고
    • The role of vacancies and local distortions in the design of new phase-change materials
    • Wuttig, M., Lüsebrink, D. & Daniel Wamwangi, W. W. The role of vacancies and local distortions in the design of new phase-change materials. Nat. Mater. 6, 122-128 (2006).
    • (2006) Nat. Mater. , vol.6 , pp. 122-128
    • Wuttig, M.1    Lüsebrink, D.2    Daniel Wamwangi, W.W.3
  • 40
    • 73449094517 scopus 로고    scopus 로고
    • Polarity-dependent resistance switching in GeSbTe phasechange thin films: The importance of excess Sb in filament formation
    • Pandian, R. et al. Polarity-dependent resistance switching in GeSbTe phasechange thin films: The importance of excess Sb in filament formation. Appl. Phys. Lett. 95, 252109 (2009).
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 252109
    • Pandian, R.1
  • 41
    • 80155183267 scopus 로고    scopus 로고
    • 5-based resistive change memory devices
    • 5-based resistive change memory devices. Appl. Phys. Lett. 99, 162109 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 162109
    • Woo, J.1
  • 42
    • 81155125105 scopus 로고    scopus 로고
    • 5 devices for field-programmable gate array configurations
    • 5 devices for field-programmable gate array configurations. Appl. Phys. Lett. 99, 192110 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 192110
    • Kim, S.1
  • 43
    • 84856173450 scopus 로고    scopus 로고
    • High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
    • Alibart, F., Gao, L., Hoskins, B. D. & Strukov, D. B. High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology 23, 075201 (2012).
    • (2012) Nanotechnology , vol.23 , pp. 075201
    • Alibart, F.1    Gao, L.2    Hoskins, B.D.3    Strukov, D.B.4
  • 45
    • 0033667165 scopus 로고    scopus 로고
    • Synaptic plasticity: Taming the beast
    • Abbott, L. F. & Nelson, S. B. Synaptic plasticity: taming the beast. Nat. Neurosci. 3, 1178-1183 (2000).
    • (2000) Nat. Neurosci. , vol.3 , pp. 1178-1183
    • Abbott, L.F.1    Nelson, S.B.2
  • 46
    • 0039484223 scopus 로고    scopus 로고
    • Spike timing dependent synaptic plasticity in biological systems
    • Roberts, P. D. & Bell, C. C. Spike timing dependent synaptic plasticity in biological systems. Biol. Cybern. 87, 392-403 (2002).
    • (2002) Biol. Cybern. , vol.87 , pp. 392-403
    • Roberts, P.D.1    Bell, C.C.2
  • 47
    • 0037187567 scopus 로고    scopus 로고
    • Spike-timing-dependent synaptic modification induced by natural spike trains
    • Froemke, R. C. & Dan, Y. Spike-timing-dependent synaptic modification induced by natural spike trains. Nature 416, 433-438 (2002).
    • (2002) Nature , vol.416 , pp. 433-438
    • Froemke, R.C.1    Dan, Y.2
  • 48
    • 82755181118 scopus 로고    scopus 로고
    • Voltage and spike timing interact in STDP - A unified model
    • Clopath, C. & Gerstner, W. Voltage and spike timing interact in STDP - a unified model. Front. Synaptic Neurosci. 2, 25 (2010).
    • (2010) Front. Synaptic Neurosci. , vol.2 , pp. 25
    • Clopath, C.1    Gerstner, W.2
  • 49
    • 0036006168 scopus 로고    scopus 로고
    • Synaptic modification in neural circuits: A timely action
    • Berninger, B. & Bi, G. Q. Synaptic modification in neural circuits: a timely action. BioEssays 24, 212-222 (2002).
    • (2002) BioEssays , vol.24 , pp. 212-222
    • Berninger, B.1    Bi, G.Q.2
  • 50
    • 84862533674 scopus 로고    scopus 로고
    • Spike timing plays a key role in synapse elimination at the neuromuscular junction
    • Favero, M., Busetto, G. & Cangiano, A. Spike timing plays a key role in synapse elimination at the neuromuscular junction. Proc. Natl. Acad. Sci. USA 109, E1667-E1675 (2012).
    • (2012) Proc. Natl. Acad. Sci. USA , vol.109 , pp. E1667-E1675
    • Favero, M.1    Busetto, G.2    Cangiano, A.3
  • 51
    • 79955538512 scopus 로고    scopus 로고
    • Low-power switching of phase-change materials with carbon nanotube electrodes
    • Xiong, F., Liao, A. D., Estrada, D. & Pop, E. Low-power switching of phase-change materials with carbon nanotube electrodes. Science 332, 568-570 (2011).
    • (2011) Science , vol.332 , pp. 568-570
    • Xiong, F.1    Liao, A.D.2    Estrada, D.3    Pop, E.4
  • 52
    • 84862594877 scopus 로고    scopus 로고
    • Breaking the speed limits of phase-change memory
    • Loke, D. et al. Breaking the speed limits of phase-change memory. Science 336, 1566-1569 (2012).
    • (2012) Science , vol.336 , pp. 1566-1569
    • Loke, D.1


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