Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles

Journal of Materials Processing Technology

Volumn 215, Issue 1, 2015, Pages 299-308

  Li, Jianfeng ^a   Johnson, Christopher Mark ^a   Buttay, Cyril ^b   Sabbah, Wissam ^c   Azzopardi, Stéphane ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITÉ DE LYON   (France)

^c UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Nanoscale silver paste; Shear strength; SiC power die attachment; Sintering

Indexed keywords

ALUMINUM NITRIDE; DIES; ELECTRONICS INDUSTRY; III-V SEMICONDUCTORS; METAL NANOPARTICLES; NICKEL-PHOSPHORUS; NONDESTRUCTIVE EXAMINATION; SHEAR FLOW; SHEAR STRENGTH; SILICON CARBIDE; SILICON COMPOUNDS; SILVER NANOPARTICLES;

DIE ATTACHMENT; DIRECT BONDED COPPERS; NANOSCALE SILVER PASTE; NON-DESTRUCTIVE MEASUREMENT; POWER ELECTRONIC MODULES; SINTERING PARAMETERS; SINTERING PROCESS; SINTERING TEMPERATURE AND TIME;

SINTERING;

EID: 84908049813     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2014.08.002     Document Type: Article

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