Printed, flexible, organic nano-floating-gate memory: Effects of metal nanoparticles and blocking dielectrics on memory characteristics

Advanced Functional Materials

Volumn 23, Issue 28, 2013, Pages 3503-3512

  Kang, Minji ^a   Baeg, Kang Jun ^b   Khim, Dongyoon ^a   Noh, Yong Young ^c   Kim, Dong Yu ^a  

^a WCU Department of Nanobio Materials and Electronics   (South Korea)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

^c Dongguk University   (South Korea)

Author keywords

ambipolar semiconductor; conjugated polymers; nano floating gates; organic field effect transistors; organic non volatile memory

Indexed keywords

AMBIPOLAR SEMICONDUCTOR; DEGREE OF RELIABILITY; HIGH ELECTRON MOBILITY; NANO-FLOATING; NON-VOLATILE MEMORY; ON/OFF-CURRENT RATIOS; POLYETHYLENE NAPHTHALATE; RETENTION CHARACTERISTICS;

CONJUGATED POLYMERS; DATA STORAGE EQUIPMENT; ESTERS; FABRICATION; METAL NANOPARTICLES; NAPHTHALENE; ORGANIC FIELD EFFECT TRANSISTORS; SILVER; TRANSISTORS;

DIELECTRIC MATERIALS;

EID: 84880574721     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201203417     Document Type: Article

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