The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem

Applied Physics Letters

Volumn 105, Issue 11, 2014, Pages

  Massabuau, F C P ^a   Davies, M J ^b   Oehler, F ^a   Pamenter, S K ^a   Thrush, E J ^a   Kappers, M J ^a   Kovacs A ^c   Williams, T ^d   Hopkins, M A ^e   Humphreys, C J ^a   Dawson, P ^b   Dunin Borkowski, R E ^c   Etheridge, J ^d   Allsopp, D W E ^e   Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d MONASH UNIVERSITY   (Australia)

^e University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

INGAN/GAN;

EID: 84907546457     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4896279     Document Type: Article

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