The impact of growth parameters on trench defects in InGaN/GaN quantum wells

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 4, 2014, Pages 740-743

  Massabuau, F C P ^a   Le Fol, A ^a   Pamenter, S K ^a   Oehler, F ^a   Kappers, M J ^a   Humphreys, C J ^a   Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

atomic force microscopy; cathodoluminescence; defect; nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR QUANTUM WELLS;

BLUE LIGHT EMITTING DIODES; DENSITY OF DEFECTS; EMISSION PROPERTIES; GROWTH CONDITIONS; GROWTH PARAMETERS; INGAN/GAN QUANTUM WELL; QUANTUM WELL STRUCTURES; SHORTER WAVELENGTH;

DEFECTS;

EID: 84897987145     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201300485     Document Type: Article

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