Trench-shaped defects on AlGaInN quantum wells grown under different growth pressures

Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

  Suzuki, Tomoyuki ^a   Kaga, Mitsuru ^a   Naniwae, Kouichi ^b   Kitano, Tsukasa ^b   Hirano, Keisuke ^a   Takeuchi, Tetsuya ^a   Kamiyama, Satoshi ^a,b   Iwaya, Motoaki ^a   Akasaki, Isamu ^a,c  

^a MEIJO UNIVERSITY   (Japan)

^b EL SEED Corporation   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL SOURCES; ALGAINN; DEFECT FORMATION; GROWTH PRESSURE; HIGH GROWTH; HIGH QUALITY; NONRADIATIVE CENTERS; PHOTOLUMINESCENCE INTENSITIES;

PHYSICAL PROPERTIES; PHYSICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84883195918     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.08JB27     Document Type: Article

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