Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Applied Physics Letters

Volumn 103, Issue 15, 2013, Pages

  Li, Zengcheng ^a,b,c   Liu, Jianping ^b,c,d   Feng, Meixin ^a,b,c   Zhou, Kun ^a,b,c   Zhang, Shuming ^b,c   Wang, Hui ^b,c   Li, Deyao ^b,c   Zhang, Liqun ^b,c   Zhao, Degang ^a   Jiang, Desheng ^a   Wang, Huaibing ^b,c   Yang, Hui ^a,b,c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^d SIP   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL STRUCTURE; HIGH THERMAL; INGAN QUANTUM WELLS; INGAN/GAN QUANTUM WELL; MICROPHOTOLUMINESCENCE; P-TYPE LAYERS; THERMAL BUDGET; Z-CONTRAST SCANNING;

BUDGET CONTROL; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; LIGHT; LUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84886908584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824850     Document Type: Article

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