Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

Applied Physics Letters

Volumn 103, Issue 2, 2013, Pages

  Langer, Torsten ^a   Jönen, Holger ^a   Kruse, Andreas ^a,b   Bremers, Heiko ^a   Rossow, Uwe ^a   Hangleiter, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXPONENTIAL DEPENDENCE; NON-RADIATIVE LIFETIMES; NON-RADIATIVE RECOMBINATIONS; NONRADIATIVE RECOMBINATION CENTERS; QUANTUM WELL STRUCTURES; STRAIN-INDUCED DEFECTS; TEMPERATURE DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

DEFECTS; PHOTOLUMINESCENCE SPECTROSCOPY; STRAIN ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84880463721     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813446     Document Type: Article

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