Cathode hot electrons and anode hot holes in tunneling MOS capacitors

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 296-299

  Palestri, P ^a   Selmi, L ^a   Sangiorgi, E ^a   Pavesi, M ^b   Widdershoven, F ^c  

^a UNIVERSITY OF UDINE   (Italy)

^b INFM   (Italy)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CHARGE INJECTION; DEGRADATION; DIELECTRIC DEVICES; MONTE CARLO METHODS; MOS CAPACITORS; SEMICONDUCTING SILICON; SILICON; SOLID STATE DEVICES;

BIAS DEPENDENCE; DEVICE DEGRADATION; GATE CURRENT; HOLE INJECTION; MONTE CARLO CODES; OXIDE DEGRADATION; STATE OF THE ART; TRANSPORT MODELS;

HOT ELECTRONS;

EID: 84907818517     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194773     Document Type: Conference Paper

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