Silicon nitridation by nitric oxide (NO) for Ta2O5 gate dielectric application in MOS Devices

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 420-423

  Devoivre, T ^a,b,c   Martin, F ^b   Papadas, C ^a,c   Setton, M ^d  

^a STMICROELECTRONICS   (France)

^b Grenoble INP Phelma   (France)

^c ORANGE LABS   (France)

^d Lam Research Sarl   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GROWTH KINETICS; INTERFACES (MATERIALS); NITRIC OXIDE; NITRIDATION; TANTALUM OXIDES;

ELECTRICAL PERFORMANCE; GATE DIELECTRIC APPLICATIONS; INTERFACE CONTROL; INTERFACIAL STATE DENSITY; NATIVE OXIDES; SI SUBSTRATES; SURFACE PREPARATION;

MOS DEVICES;

EID: 84907905815     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. T. Devoivre et al, VLSI Symp. Techn. digest, Kyoto, June 1999 (to be published).
2. A. Halimaoui et al, MRS Spring meeting 1998, vol. 532.
3. D. Park et al, IEDM Tech. Digest, 1998, pp. 381-384.
4. G. Ghibaudo et al, Proc. IEEE ICMTS, vol. 12, March 1999, pp. 111-116.
5. G. B. Alers et al, Appl. Phys. Lett., Vol. 73, No. 11, Sept. 1998, p. 1517.
6. C. Papadas et al, Rev. Sci. Instrum., Vol. 63, No. 9, Sept. 1992, pp. 4189-191.