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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Properties of SiO2 and Si3 N4 as gate dielectrics for printed ZnO transistors

(6) Walther, S a Polster, S a Meyer, B a Jank, M P M b Ryssel, H a,b Frey, L a,b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HALL MOBILITY; HOLE MOBILITY; II-VI SEMICONDUCTORS; LOW-K DIELECTRIC; METAL NANOPARTICLES; NITRIDES; OXIDE MINERALS; SILICA; SILICON NITRIDE; SILICON OXIDES; SIO2 NANOPARTICLES; SYNTHESIS (CHEMICAL); TEMPERATURE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZNO NANOPARTICLES;

INDUCED CHARGES; INSULATOR MATERIALS; LOW TEMPERATURES; NANOPARTICLE LAYERS; SEMICONDUCTING LAYER; SUBTHRESHOLD SLOPE; TRANSISTOR PARAMETERS; ZNO TRANSISTORS;

GATE DIELECTRICS;

EID: 84905943199 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3524291 Document Type: Conference Paper

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.