Electrical modeling of thin-film transistors

Critical Reviews in Solid State and Materials Sciences

Volumn 32, Issue 3-4, 2007, Pages 111-142

  Hong, D ^a   Yerubandi, G ^a   Chiang, H Q ^a   Spiegelberg, M C ^a   Wager, J F ^a  

^a Oregon State University   (United States)

Author keywords

3 layer model; Channel mobility; Comprehensive depletion mode model; Conductance integral equation; Device modeling; Discrete trap model; Fringing current artifacts; Series resistance; Square law model; Thin film transistor; Trapping

Indexed keywords

APPROXIMATION THEORY; ELECTRON TRAPS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; PARAMETER ESTIMATION;

3-LAYER MODELS; CHANNEL MOBILITY; COMPREHENSIVE DEPLETION-MODE MODELS; DEVICE MODELING; DISCRETE TRAP MODELS; FRINGING CURRENT ARTIFACTS; SERIES RESISTANCES; SQUARE-LAW MODELS;

THIN FILM TRANSISTORS;

EID: 34548356895     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408430701707347     Document Type: Review

References (33)

1. P. K. Weimer, Thin-film transistors, in Field-Effect Transistors: Physics, Technology, and Applications, Wallmark, J. T. and Johnson, H., Eds., Prentice-Hall, New Jersey, 1966, 216-252.
2. A. Tickle, Thin-Film Transistors: A New Approach to Microelectronics, John Wiley & Sons, New York, 1969.
3. S. M. Sze, Physics of Semiconductor Devices, 1st edition, John Wiley & Sons, New York, 1969, 567-623.
4. M. Shur, and M. Hack, J. Appl. Phys. 55, 3831 (1984).
5. M. Shur, M. Hack, and J. Shaw, J. Appl. Phys. 66, 3371 (1989).
6. M. Hack, M. S. Shur, and J. G. Shaw, IEEE Trans. Electron. Devices 36, 2764 (1989).
7. A. W. Wang and K. C. Saraswat, IEEE Trans. Electron. Devices 47, 1035 (2000).
8. M. D. Jacunski M. S. Shur, A. A. Owusu, T. Ytterdal, M. Hack, and B. Iniguez, IEEE Trans. Electron. Devices 46, 1146 (1999).
9. D. Greve, Field Effect Devices and Applications, Prentice Hall, New Jersey, 1998.
10. C. Kagan, and P. Andry, Thin-Film Transistors, Marcel Dekker, New York, 2003.
11. Y. Kuo, Ed., Thin-Film Transistors: Materials and Processes, Volume 1, Amorphous Silicon Thin-Film Transistors, Kluwer, Boston, 2004.
12. Y. Kuo, Ed., Thin-Film Transistors: Materials and Processes, Volume 2, Polycrystalline Silicon Thin-Film Transistors, Kluwer, Boston, 2004.
13. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003).
14. J. F. Wager, Science 300, 1245 (2003).
15. B. J. Norris, J. Anderson, J. F. Wager, and D. A. Keszler, J. Phys. D 36, L105 (2003).
16. R. Presley, C. Munsee, C. Park, D. Hong, J. F. Wager, and D. A. Keszler, J. Phys. D 37, 2810 (2004).
17. H. Q. Chiang, R. L. Hoffman, J.-Y. Jeong, J. F. Wager, and D. A. Keszler, Appl. Phys. Lett. 86, 013503 (2005).
18. N. L. DeHuff, E. S. Kettenring, D. Hong, C.-H. Park, H. Q. Chiang, R. L. Hoffman, J. F. Wager, and D. A. Keszler, J. Appl. Phys. 97, 064505 (2005).
19. R. F. Pierret, Semiconductor Fundamentals, Addison-Wesley, Reading, Massachusetts, 1996.
20. H. Borkan, and P. K. Weimer, RCA Rev. 24, 153 (1963).
21. W. Shockley, Proc. IRE 40, 1365 (1952).
22. G. F. Neumark, Solid-State Electron. 7, 725 (1964).
23. A. R. Brown, C. P. Jarrett, D. M. de Leeuw, and M. Matters, Syn. Metals 88, 37 (1997).
24. D. Hong, M. S. Thesis, Oregon State University, 2005.
25. R. Hoffman, J. Appl. Phys. 95, 5813 (2004).
26. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, Cambridge, 1998.
27. J. S. Kang and D. K. Schroder, Solid-State Electron. 32, 679, 1989.
28. S. C. Sun, and J. Plummer, IEEE Trans. Electron Devices 27, 1497 (1980).
29. D. Schroder, Semiconductor Material and Device Characterization, 2nd edition, John Wiley & Sons, New York, 1998.
30. E. M. C. Fortunato, P. M. C. Baquinha, A. Pimentel, A. Gonclavez, A. Marques, R. Martins, and L. Pereira, Appl. Phys. Lett. 85, 2541 (2004).
31. R. Hoffman, Solid-State Electron. 49, 648 (2005).
32. S. M. Sze, Physics of Semiconductor Devices, 2nd edition, John Wiley & Sons, New York, 1981.
33. A. Goetzberger, and E. H. Nicollian, Appl. Phys. Lett. 9, 444, 1966.