Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1)

Microelectronics Reliability

Volumn 52, Issue 11, 2012, Pages 2547-2550

  Fontsere A ^a   Perez Tomas A ^a   Placidi, M ^a   Baron, N ^b,c   Chenot, S ^b   Cordier, Y ^b   Moreno, J C ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CRHEA CNRS   (France)

^c PICOGIGA International ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; GAN BUFFER; GATE-LEAKAGE CURRENT; HIGH TEMPERATURE; REVERSE CURRENTS; REVERSE LEAKAGE; REVERSE LEAKAGE CURRENT; SI (1 1 1); SI SUBSTRATES; SILICON SUBSTRATES; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THERMAL ACTIVATION; THERMIONIC CURRENTS;

ACTIVATION ENERGY; ARRHENIUS PLOTS; LEAKAGE CURRENTS; SILICON;

GALLIUM NITRIDE;

EID: 84867582861     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.05.017     Document Type: Article

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