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Solid State Communications

Volumn 150, Issue 31-32, 2010, Pages 1473-1478

Structural and electronic properties of monolayer hydrogenated honeycomb III-V sheets from first-principles

(2) Wang, Yanli a Shi, Siqi a

a ZHEJIANG SCI TECH UNIVERSITY (China)

Author keywords

C. III V compound; D. Electronic structure; E. First principles calculation

Indexed keywords

ALN; ATOMIC RADIUS; BAND GAPS; BOAT CONFORMATIONS; CHAIR CONFORMATIONS; COHESIVE ENERGIES; D. ELECTRONIC STRUCTURE; DEGENERATE STRUCTURES; E. FIRST-PRINCIPLES CALCULATIONS; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; GAAS; III-V COMPOUNDS; WIDE-GAP SEMICONDUCTOR;

ARSENIC; ARSENIC COMPOUNDS; BOATS; CONFORMATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM NITRIDE; HONEYCOMB STRUCTURES; LATTICE CONSTANTS; MONOLAYERS; PHOSPHORUS;

HYDROGENATION;

EID: 77955664699 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2010.05.031 Document Type: Article

Times cited : (51)

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