First-principles study on structural and electronic properties of AlNSi x heterosheet

Physica B: Condensed Matter

Volumn 407, Issue 12, 2012, Pages 2301-2305

  Zhang, Jing ^a   Zhang, Jian Min ^a   Xu, Ke Wei ^b  

^a SHAANXI NORMAL UNIVERSITY   (China)

^b XI'AN UNIVERSITY OF ARTS AND SCIENCE   (China)

Author keywords

Border state; Edge state; Electronic properties; First principles; Heterosheets; VASP calculations

Indexed keywords

ALN; ANTIBONDING; BORDER STATE; DENSITY FUNCTION THEORY; EDGE STATE; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; GENERALIZED GRADIENT APPROXIMATIONS; HETEROSHEETS; HEXAGONAL MORPHOLOGY; HEXAGONAL NETWORKS; HIGHEST OCCUPIED VALENCE BANDS; INDIRECT SEMICONDUCTOR; K POINTS; NANORIBBONS; PROJECTOR-AUGMENTED WAVES; SI ATOMS; ZIGZAG CHAINS; ZONE BOUNDARIES;

ATOMS; CALCULATIONS; HYDROGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON;

ELECTRONIC PROPERTIES;

EID: 84862794830     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.03.018     Document Type: Article

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