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Acta Materialia

Volumn 61, Issue 20, 2013, Pages 7720-7725

The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

(4) Xia, Congxin a,b Peng, Yuting a Wei, Shuyi a Jia, Yu b

a HENAN NORMAL UNIVERSITY (China)

b ZHENGZHOU UNIVERSITY (China)

Author keywords

Density functional theory; GaN; Nanosheet; p Type doping

Indexed keywords

FORMATION ENERGIES; GAN; GROWTH CONDITIONS; MG-DOPING; NANOSHEET STRUCTURE; NUMERICAL RESULTS; P-TYPE DOPING; TRANSITION ENERGY LEVELS;

DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; NANOSHEETS;

GALLIUM NITRIDE;

EID: 84886252737 PISSN: 13596454 EISSN: None Source Type: Journal
DOI: 10.1016/j.actamat.2013.09.010 Document Type: Article

Times cited : (82)

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