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Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 11, 2013, Pages 4499-4502

Effect of AlN buffer layer on the microstructure and bandgap of AlN films deposited on sapphire substrates by pulsed laser deposition

(6) He, Huan a Huang, Lirong a Xiao, Min a Fu, Yuechun a Shen, Xiaoming a Zeng, Jianmin a

a GUANGXI UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER LAYERS; CRYSTALLINITIES; GROWTH STAGES; OPTICAL TRANSMITTANCE SPECTRUM; POLARITY INVERSION; PRE-DEPOSITION; PREFERRED ORIENTATIONS; SAPPHIRE SUBSTRATES;

ALUMINUM; BUFFER LAYERS; DEPOSITION; OPTICAL WAVEGUIDES; PULSED LASER DEPOSITION; SAPPHIRE; SUBSTRATES;

ENERGY GAP;

EID: 84887113605 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-013-1431-8 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.