Shear strain induced indirect to direct transition in band gap in AlN monolayer nanosheet

Computational Materials Science

Volumn 86, Issue , 2014, Pages 206-210

  Liu, Peng ^a,b   De Sarkar, Abir ^a,c   Ahuja, Rajeev ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c CENTRAL UNIVERSITY OF RAJASTHAN   (India)

Author keywords

A. Aluminum nitride (AlN); B. Monolayer nanosheet; C. Band gap; D. Strain

Indexed keywords

EID: 84894524178     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2014.01.026     Document Type: Article

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