First-principles study on the structural and electronic properties of AlNCx nanosheet

Solid State Communications

Volumn 151, Issue 11, 2011, Pages 834-837

  Qi, Yao Yao ^a   Duan, Ying Ni ^b   Zhang, Jian Min ^a   Xu, Ke Wei ^c  

^a SHAANXI NORMAL UNIVERSITY   (China)

^b XINJIANG MEDICAL UNIVERSITY   (China)

^c XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

A. Nanostructures; D. Electronelectron interactions; D. Electronic band structure; E. Density functional theory

Indexed keywords

A. NANOSTRUCTURES; ALN; ANTIBONDING; D. ELECTRONELECTRON INTERACTIONS; E. DENSITY FUNCTIONAL THEORY; EDGE STATE; EDGE-ATOMS; ELECTRONIC BAND STRUCTURE; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; FLAT DISPERSION; HIGHEST OCCUPIED VALENCE BANDS; NANORIBBONS; ZONE BOUNDARIES;

ATOMS; BAND STRUCTURE; DISPERSIONS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GRAPHITE; NANOSTRUCTURES;

DENSITY FUNCTIONAL THEORY;

EID: 79955607321     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.03.020     Document Type: Article

References (44)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov Science 306 2004 666
2. A.K. Geim, and K.S. Novoselov Nat. Mater. 6 2007 183
3. Y.B. Zhang, Y.W. Tan, H.L. Stormer, and P. Kim Nature 438 2005 201
4. S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, F. Schedin, D.C. Elias, J.A. Jaszczak, and A.K. Geim Phys. Rev. Lett. 100 2008 016602
5. K.S. Novoselov, Z. Jiang, Y. Zhang, S.V. Morozov, H.L. Stormer, U. Zeitler, J.C. Maan, G.S. Boebinger, P. Kim, and A.K. Geim Science 315 2007 1379
6. J. Qi, Y. Gao, S.H. Tang, L.H. Jiang, S.Y. Yan, J.S. Guo, Q. Xin, and G.Q. Sun Chin. J. Catal. 27 2006 708
7. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, I.V. Grigorieva, S.V. Dubonos, and A.A. Firsov Nature 438 2005 197
8. C. Berger, Z.M. Song, X.B. Li, X.S. Wu, N. Brown, C. Naud, D. Mayou, T.B. Li, J. Hass, A.N. Marchenkov, E.H. Conrad, P.N. First, and W.A. de Heer Science 312 2006 1191
9. V. Falko Nat. Phys. 3 2007 151
10. Q.M. Yan, B. Huang, J. Yu, F.W. Zheng, J. Zang, J. Wu, B.L. Gu, F. Liu, and W.H. Duan Nano Lett. 7 2007 1469
11. M. Fujita, K. Wakabayashi, K. Nakada, and K. Kusakabe J. Phys. Soc. Japan 65 1996 1920
12. K. Nakada, and M. Fujita Phys. Rev. B 54 1996 17954
13. Y. Miyamoto, K. Nakada, and M. Fujita Phys. Rev. B 59 1999 9858
14. M. Ezawa Phys. Rev. B 73 2006 045432
15. Y.W. Son, M.L. Cohen, and S.G. Louie Phys. Rev. Lett. 97 2006 216803
16. J. Nakamura, T. Nitta, and A. Natori Phys. Rev. B 72 2005 205429
17. O. Stephan, P.M. Ajayan, C. Colliex, Ph. Redlich, J.M. Lambert, P. Bernier, and P. Lefin Science 266 1994 1683
18. Z. Weng-Sieh, K. Cherrey, N.G. Chopra, X. Blase, Y. Miyamoto, A. Rubio, M.L. Cohen, S.G. Louie, A. Zettl, and R. Gronsky Phys. Rev. B 51 1995 11229
19. K. Suenaga, C. Colliex, N. Demoncy, A. Loiseau, H. Pascard, and F. Willaime Science 278 1997 653
20. Y. Zhang, H. Gu, K. Suenaga, and S. Iijima Chem. Phys. Lett. 279 1997 264
21. M.O. Watanabe, S. Itoh, T. Sasaki, and K. Mizushima Phys. Rev. Lett. 77 1996 187
22. Ph. Kohler-Redlich, M. Terrones, C. Manteca-Diego, W.K. Hsu, H. Terrones, M. Rhle, H.W. Kroto, and D.R.M. Walton Chem. Phys. Lett. 310 1999 459
23. X. Blase, J.-C. Charlier, A. De Vita, and R. Car Appl. Phys. A: Mater. Sci. Process. 68 1999 293
24. M. Terrones, J.-C. Charlier, A. Gloter, E. Cruz-Silva, E. Terrs, Y.B. Li, A. Vinu, Z. Zanolli, J.M. Dominguez, H. Terrones, Y. Bando, and D. Golberg Nano Lett. 8 2008 1026
25. Q. Wu, Z. Hu, X.Z. Wang, Y. Chen, and Y.N. Lu J. Phys. Chem. B 107 2003 9726
26. Y.B. Tang, H.T. Cong, F. Li, and H.M. Cheng Diam. Relat. Mater. 16 2007 537
27. T. Xie, Y. Lin, G.S. Wu, X.Y. Yuan, Z. Jiang, C.H. Ye, G.W. Meng, and L.D. Zhang Inorg. Chem. Commun. 7 2004 545
28. J.Y. Li, Z.Y. Qiao, X.L. Chen, Y.G. Cao, and M. He J. Phys.: Condens. Matter 13 2001 L285
29. X. Xiang, C.B. Cao, F.L. Huang, R.T. Lv, and H.S. Zhu J. Cryst. Growth 263 2004 25
30. F.L. Zheng, Y. Zhang, J.M. Zhang, and K.W. Xu J. Mol. Struct. 984 2010 344
31. F.L. Zheng, Y. Zhang, J.M. Zhang, and K.W. Xu J. Phys. Chem. Solids 72 2011 256
32. F.L. Zheng, J.M. Zhang, Y. Zhang, and V. Ji Physica B 405 2010 3775
33. F.L. Zheng, Y. Zhang, J.M. Zhang, K.W. Xu, J. Appl. Phys. (submitted for publication).
34. S. Strite, and H. Morkoc J. Vac. Sci. Technol. B 10 1992 1237
35. P. Ruterana, M. Albrecht, and J. Neugebauer Nitride Semiconductors, Handbook on Materials and Devices 2003 Wiley-VCH Berlin (Chapter 3) 107
36. G. Kresse, and J. Hafner Phys. Rev. B 47 1993 558
37. G. Kresse, and J. Hafner Phys. Rev. B 49 1994 14251
38. G. Kresse, and J. Furthmller Comput. Mater. Sci. 6 1996 15
39. G. Kresse, and J. Furthmller Phys. Rev. B 54 1996 11169
40. D.D. Johnson Phys. Rev. B 38 1988 12087
41. P. Pulay Chem. Phys. Lett. 73 1980 393
42. G. Kresse, and D. Joubert Phys. Rev. B 59 1999 1758
43. J.P. Perdew, K. Burke, and M. Ernzerhof Phys. Rev. Lett. 77 1996 3865
44. H.J. Monkhorst, and J.D. Pack Phys. Rev. B 13 1976 5188