RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Luo, Wun Cheng ^a   Liu, Jen Chieh ^a   Feng, Hsien Tsung ^a   Lin, Yen Chuan ^a   Huang, Jiun Jia ^a   Lin, Kuan Liang ^a   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT STATUS; PERCOLATION MODELS; POWER-LAW; PREDICTION METHODOLOGY; STATISTICAL PREDICTION;

ELECTRON DEVICES;

EID: 84876132316     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479012     Document Type: Conference Paper

References (13)

1. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, no. 25/26, pp. 2632-2663, Jul. 2009.
2. Y. C. Chen, C. F. Chen, C. T. Chen, J. Y. Yu, S. Wu, S. L. Lung, R. Liu, and C. Y. Lu, "An access-transistor-free (0T/lR) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device," in IEDM Tech. Dig., 2003, pp. 905-908.
3. S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, and R.Waser, "Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches," Adv. Funct. Mater., vol. 21, no. 23, pp. 4487-4492, Dec. 2011.
4. S. Yu, Y. Wu, and H.-S. P. Wong, "Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory," Appl. Phys. Lett., vol. 98, no. 10, p. 103 514, Mar. 2011.
5. L. Zhang, R. Huang, Y. Y. Hsu, F. T. Chen, H. Y. Lee, Y. S. Chen, W. S. Chen, P. Y. Gu, W. H. Liu, S. M. Wang, C. H. Tsai, M. J. Tsai and P. S. Chen, "Statistical analysis of retention behavior and lifetime prediction of HfOx-based RRAM," in Proc. Int. Reliability Phys. Symp., 2011, pp. 847-851.
6. W. C. Luo, K. L. Lin, J. J. Huang, C. L. Lee, T. H. Hou, "Rapid prediction of RRAM RESET-state disturb by ramped voltage stress," IEEE Electron Device Lett., vol.33, no.4, pp.597-599, Apr. 2012.
7. S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D. W. Kim, C. U. Jung, S. Seo, M. J. Lee, and T. W. Noh, "Random circuit breaker network model for unipolar resistance switching," Adv. Mater., vol. 20, pp. 1154-1159, Mar. 2008.
8. J. J. Huang, C. W. Kuo, W. C. Chang, and T. H. Hou, "Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode," Appl. Phys. Lett., vol.96, 262901, 2010.
9. K. L. Lin, T. H. Hou, J. Shieh, J. H. Lin, C. T. Chou, and Y. J. Lee, "Electrode dependence of filament formation in HfO2 resistive-switching memory," J. Appl. Phys., vol. 109, 084104, 2011.
10. E. Y. Wu, J. Aitken, E. Nowak, A. Vayshenker, P. Varekamp, G. Hueckel, J. McKenna, D. Harmon, L. K. Han, C. Montrose, and R. Dufresne, "Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides," in IEDM Tech. Dig., 2000, pp. 541-544.
11. S. Yu, X. Guan, and H.-S. P. Wong, "On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization," in IEDM Tech. Dig., 2011, pp. 413-416.
12. A. Kerber, L. Pantisano, A. Veloso, G. Groeseneken, and M. Kerber, "Reliability screening of high-k dielectrics based on voltage ramp stress," Microelectron. Reliab., vol. 47, no. 4/5, pp. 513-517, Apr./May 2007.
13. N. Raghavan, K. L. Pey, X. Wu, W. H. Liu and M. Bosman, "Percolative model and thermodynamic analysis of oxygen ion mediated resistive switching", IEEE Electron Device Lett., vol.33, no.5, pp.712-714, May 2012.