Endurance degradation in metal oxide-based resistive memory induced by oxygen Ion loss effect

IEEE Electron Device Letters

Volumn 34, Issue 10, 2013, Pages 1292-1294

  Chen, Bing ^a   Kang, Jin Feng ^a   Gao, Bin ^a   Deng, Ye Xin ^a   Liu, Li Feng ^a   Liu, Xiao Yan ^a   Fang, Zheng ^b   Yu, Hong Yu ^a   Wang, Xin Peng ^b   Lo, Guo Qiang ^b   Kwong, Dim Lee ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Endurance; oxygen ion; oxygen vacancy; reliability; resistive random access memory (RRAM); resistive switching

Indexed keywords

DEGRADATION BEHAVIOR; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; SWITCHING VOLTAGES; TECHNICAL SOLUTIONS;

DURABILITY; IONS; OXYGEN VACANCIES; RANDOM ACCESS STORAGE; RELIABILITY;

OXYGEN SUPPLY;

EID: 84884801333     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2277916     Document Type: Article

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