Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

Applied Physics Letters

Volumn 104, Issue 26, 2014, Pages

  Imtiaz, Atif ^a,b   Wallis, Thomas M ^a   Weber, Joel C ^a,b   Coakley, Kevin J ^a   Brubaker, Matt D ^a   Blanchard, Paul T ^a   Bertness, Kris A ^a   Sanford, Norman A ^a   Kabos, Pavel ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b University of Colorado at Boulder   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MICROSCOPES; NANOWIRES; NITRIDES;

AXIAL VARIATIONS; CHARGE DEPLETION; DOPING CONCENTRATION; ELECTRICAL CONTACTS; GALLIUM NITRIDE NANOWIRES; MEASUREMENTS OF; SCANNING MICROWAVE MICROSCOPES; SPATIALLY RESOLVED;

SEMICONDUCTOR JUNCTIONS;

EID: 84905656110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4886963     Document Type: Article

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