Electrical characterization of electrochemically grown single copper nanowires

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2139-2141

  Toimil Molares, M E ^a   Hohberger E M ^b   Schaeflein, Ch ^b   Blick, R H ^b   Neumann, R ^a   Trautmann, C ^a  

^a GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

^b UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC RESISTANCE; ETCHING; MEMBRANES; OXIDATION; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS; WIRE;

ULTRASONIC BATH;

NANOSTRUCTURED MATERIALS;

EID: 0344942481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563741     Document Type: Article

References (25)

1. C. A. Foss, G. L. Hornyak, J. A. Stocker, and C. R. Martin, Adv. Mater. 5, 135 (1993).
2. J. Rivas, A. Kazadi Mukenga Bantu, G. Zaragoza, M. C. Blanco, and M. A. López Quintela, J. Magn. Magn. Mater. 249, 220 (2002).
3. L. Piraux, J. M. George, J. F. Despres, C. Leroy, E. Ferain, R. Legras, K. Ounadjela, and A. Fert, Appl. Phys. Lett. 65, 2484 (1994).
4. A. Blondel, J. P. Meier, B. Doudin, and J.-Ph. Ansermet. Appl. Phys. Lett. 65, 3019 (1994).
5. X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, Nature (London) 409, 66 (2001).
6. M. P. Zach, K. H. Ng, and R. M. Penner, Science 290, 2120 (2000).
7. A. M. Morales and C. M. Lieber, Science 279, 208 (1998).
8. C. R. Martin, Science 266, 1961 (1993).
9. J. Vetter and R. Spohr, Nucl. Instrum. Methods Phys. Res. B 79, 691 (1993).
10. P. A. Smith, C. D. Nordquist, T. N. Jackson, T. S. Mayer, B. R. Martin, J. Mbindyo, and T. E. Mallouk, Appl. Phys. Lett. 77, 1399 (2000).
11. Z. Zhang, X. Sun, M. S. Dresselhaus, J. Y. Ying, and J. Heremans, Phys. Rev. B 61, 4850 (2000).
12. M. E. Toimil Molares, V. Buschmann, D. Dobrev, R. Neumann, R. Scholz, I. U. Schuchert, and J. Vetter, Adv. Mater. 13, 62 (2001).
13. M. E. Toimil Molares, J. Brötz, V. Buschmann, D. Dobrev, R. Neumann, R. Scholz, I. U. Schuchert, C. Trautmann, and J. Vetter, Nucl. Instrum. Methods Phys. Res. B 185, 192 (2001).
14. J. Muster, G. T. Kim, V. Krstic, J. G. Park, Y. W. Park, S. Roth, and M. Burghard, Adv. Mater. 12, 420 (2000).
15. P. A. Smith, C. D. Nordquist, T. N. Jackson, T. S. Mayer, B. R. Martin, J. Mbindyo, and T. E. Mallouk, Appl. Phys. Lett. 77, 1399 (2000).
16. D. J. Pena, B. Razavi, P. A. Smith, M. J. Natan, T. S. Mayer, T. E. Mallouk, and C. D. Heating, Mater. Res. Soc. Symp. Proc. 636, D4.6.1 (2001).
17. N. I. Kovtyukhova, B. R. Martin, J. K. N. Mbindyo, T. E. Mallouk, M. Cabassi, and T. S. Mayer, Mater. Sci. Eng., C 19, 255 (2002).
18. A. Bachtold, C. Terrier, M. Krüger, M. Henny, T. Hoss, C. Strunk, R. Huber, H. Birk, U. Staufer, and C. Schönenberger, Microelectron. Eng. 41/42, 571 (1998).
19. K. Liu, Cl. L. Chien, and P. C. Searson, Phys. Rev. B 58, 14681 (1998).
20. R. L. Fleischer, P. B. Price, and R. M. Walker, Nuclear Tracks in Solids: Principles and Applications (University of California Press, Berkeley, 1975).
21. Measurements shown here were performed only in a two-point geometry.
22. C. Durkan and M. E. Weiland, Phys. Rev. B 61, 14215 (2000).
23. J. Li, J. W. Mayer, and E. G. Colgan, J. Appl. Phys. 70, 2820 (1991).
24. Gmelin, Handbuch der Anorganischen Chemie, Chap. 60, Teil D (Verlag Chemie, Weinheim, 1955).
25. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).