Comparative study of line width roughness (LWR) in next-generation lithography (NGL) processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7640, Issue , 2010, Pages

  Patel, Kedar ^a,b   Wallow, Thomas ^c   Levinson, Harry J ^c   Spanos, Costas J ^b  

^a SanDisk Corporation   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

LER; line edge roughness; line width roughness next generation lithography; LWR; NGL

Indexed keywords

NANOIMPRINT LITHOGRAPHY; OPTIMIZATION;

LER; LINE EDGE ROUGHNESS; LWR; NEXT GENERATION LITHOGRAPHY; NGL;

ROUGHNESS MEASUREMENT;

EID: 84905448133     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.848183     Document Type: Conference Paper

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