Etching of 42 nm and 32 nm half-pitch features patterned using step and flash® imprint lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Brooks, Cynthia B ^a   Labrake, Dwayne L ^a   Khusnatdinov, Niyaz ^a  

^a MOLECULAR IMPRINTS INC   (United States)

Author keywords

Hardmask etch; Imprint lithography; Imprint resist volume; Nanoimprint lithography; Residual layer; S FIL; Step and flash imprint lithography

Indexed keywords

HARDMASKS; IMPRINT LITHOGRAPHY; IMPRINT RESIST; NANO-IMPRINT; RESIDUAL LAYERS; S-FIL; STEP AND FLASH IMPRINT LITHOGRAPHY;

SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS;

NANOIMPRINT LITHOGRAPHY;

EID: 79959328567     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.775586     Document Type: Conference Paper

References (8)

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