Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors

ACS Nano

Volumn 8, Issue 7, 2014, Pages 7333-7339

  Franklin, Aaron D ^a,b   Farmer, Damon B ^a   Haensch, Wilfried ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b DUKE UNIVERSITY   (United States)

Author keywords

carbon nanotube; CNTFET; contact; contact resistance; field effect transistor; transistor scaling

Indexed keywords

CARBON NANOTUBES; CONTACT RESISTANCE; CONTACTS (FLUID MECHANICS); PALLADIUM; RHODIUM; TRANSISTORS;

CARBON NANOTUBE TRANSISTORS; CHANNEL MATERIALS; CNTFET; CONTACT LENGTH; METAL CONTACTS; SCALED DEVICES; SCALING TRENDS; TRANSISTOR SCALING;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 84904740983     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5024363     Document Type: Article

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