Schottky-to-ohmic crossover in carbon nanotube transistor contacts

Physical Review Letters

Volumn 111, Issue 23, 2013, Pages

  Perebeinos, V ^a   Tersoff, J ^a   Haensch, W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTORS; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; ELECTRICAL CONTACTS; HIGH PERFORMANCE DEVICES; NANOTUBE DIAMETERS; ON STATE CURRENT; TRANSFER CHARACTERISTICS;

OHMIC CONTACTS;

CARBON NANOTUBES;

EID: 84889808217     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.111.236802     Document Type: Article

References (20)

1. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and P. Avouris, Phys. Rev. Lett. 87, 256805 (2001). PRLTAO 0031-9007 10.1103/PhysRevLett.87.256805
2. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. 89, 106801 (2002). PRLTAO 0031-9007 10.1103/PhysRevLett.89.106801
3. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and P. Avouris, Phys. Rev. Lett. 89, 126801 (2002). PRLTAO 0031-9007 10.1103/PhysRevLett.89. 126801
4. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003). NATUAS 0028-0836 10.1038/nature01797 (Pubitemid 36987985)
5. A. W. Cummings and F. Léonard, Appl. Phys. Lett. 98, 263503 (2011). APPLAB 0003-6951 10.1063/1.3605586
6. J. Guo, S. Datta, M. Lundstrom, M. Brink, P. McEuen, A. Javey, H. Dai, H. Kim, and P. McIntyre, in Proceedings of the Electron Devices Meeting, IEDM'02 (IEEE, New York, 2002), p. 711.
7. M. V. Fischetti, L. Wang, B. Yu, C. Sachs, P. M. Asbeck, Y. Taur, and M. Rodwell, in Proceedings of the Electron Devices Meeting, IEDM'07 (IEEE, New York, 2007), p. 109.
8. L. Wei, D. J. Frank, L. Chang, and H.-S. P. Wong, IEEE Trans. Electron Devices 58, 2456 (2011). IETDAI 0018-9383 10.1109/TED.2011.2153858
9. Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and P. Avouris, Nano Lett. 5, 1497 (2005). NALEFD 1530-6984 10.1021/nl0508624 (Pubitemid 41084442)
10. A. W. Cummings and F. Léonard, ACS Nano 6, 4494 (2012). ANCAC3 1936-0851 10.1021/nn301302n
11. S. Datta, Quantum Transport Atom to Transistor (Cambridge University Press, Cambridge, England, 2005).
12. S. Jin, T.-W. Tang, and M. V. Fischetti, IEEE Trans. Electron Devices 55, 727 (2008). IETDAI 0018-9383 10.1109/TED.2007.913560 (Pubitemid 351404527)
13. See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.111.236802 for a more complete description of the model.
14. R.-H. Yan, A. Ourmazd, and K. F. Lee, IEEE Trans. Electron Devices 39, 1704 (1992). IETDAI 0018-9383 10.1109/16.141237
15. V. Perebeinos, J. Tersoff, and P. Avouris, Phys. Rev. Lett. 94, 086802 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.94.086802 (Pubitemid 40629922)
16. A. D. Franklin and Z. Chen, Nat. Nanotechnol. 5, 858 (2010). NNAABX 1748-3387 10.1038/nnano.2010.220
17. P. A. Khomyakov, G. Giovannetti, P. C. Rusu, G. Brocks, J. van den Brink, and P. J. Kelly, Phys. Rev. B 79, 195425 (2009). PRBMDO 1098-0121 10.1103/PhysRevB.79.195425
18. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008). PRLTAO 0031-9007 10.1103/PhysRevLett.101.026803
19. S. Heinze, M. Radosavljevic, J. Tersoff, and P. Avouris, Phys. Rev. B 68, 235418 (2003). PRBMDO 0163-1829 10.1103/PhysRevB.68.235418
20. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). NNAABX 1748-3387 10.1038/nnano.2010.279