Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes

Semiconductor Science and Technology

Volumn 29, Issue 8, 2014, Pages

  Djavid, M ^a   Nguyen, H P T ^a   Zhang, S ^a   Cui, K ^a   Fan, S ^a   Mi, Z ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

GaN; light emitting diode; nanowire; quantum dot; tunnel injection

Indexed keywords

GALLIUM NITRIDE; NANOWIRES; SEMICONDUCTOR QUANTUM DOTS; WIRE;

ELECTRON BLOCKING LAYER; ELECTRON OVERFLOW; ELECTRONS AND HOLES; GAN; NEAR SURFACE REGIONS; QUANTUM DOT; TUNNEL INJECTION; WHITE LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 84904599764     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/8/085009     Document Type: Article

References (30)

1. Nguyen H P T, Cui K, Zhang S, Djavid M, Korinek A, Botton G A and Mi Z 2012 Nano Lett. 12 1317
2. Akyol F, Nath D, Krishnamoorthy S, Park P and Rajan S 2012 Appl. Phys. Lett. 100 111118
3. Özgür U, Ni X, Li X, Lee J, Liu S, Okur S, Avrutin V, Matulionis A and Morkoc H 2011 Semicond. Sci. Technol. 26 014022
4. Ni X et al 2010 Appl. Phys. Lett. 97 031110
5. Ozgur U, Liu H, Li X, Ni X and Morkoç H 2010 Proc. IEEE 98 1180
6. Kim M-H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507 (Pubitemid 47416018)
7. Meyaard D S, Lin G-B, Shan Q, Cho J, Fred Schubert E, Shim H, Kim M-H and Sone C 2011 Appl. Phys. Lett. 99 251115
8. Xie J, Ni X, Fan Q, Shimada R, Ozgur U and Morkoç H 2008 Appl. Phys. Lett. 93 121107
9. Nguyen H P T, Djavid M, Cui K and Mi Z 2012 Nanotechnology 23 194012
10. Han S-H et al 2009 Appl. Phys. Lett. 94 231123
11. Wang C et al 2010 Appl. Phys. Lett. 97 261103
12. Tu R-C, Tun C-J, Pan S-M, Chuo C-C, Sheu J, Tsai C-E, Wang T-C and Chi G-C 2003 Photon. Technol. Lett. 15 1342
13. Chichibu S et al 1999 Mater. Sci. Eng., B 59 298
14. Shen Y, Mueller G, Watanabe S, Gardner N, Munkholm A and Krames M 2007 Appl. Phys. Lett. 91 141101 (Pubitemid 47531525)
15. Zhang M, Bhattacharya P, Singh J and Hinckley J 2009 Appl. Phys. Lett. 95 201108
16. Verma J, Kandaswamy P K, Protasenko V, Verma A, Grace Xing H and Jena D 2013 Appl. Phys. Lett. 102 041103
17. Bochkareva N, Voronenkov V, Gorbunov R, Latyshev P, Lelikov Y S, Rebane Y T, Tsyuk A and Shreter Y G 2013 Semiconductors 47 127
18. Bhattacharya P, Zhang M and Hinckley J 2010 Appl. Phys. Lett. 97 251107
19. Lu T et al 2012 Appl. Phys. Lett. 100 141106
20. Son J H and Lee J-L 2010 Opt. Express 18 5466
21. Li Q and Wang G T 2010 Appl. Phys. Lett. 97 181107
22. Guo W, Zhang M, Banerjee A and Bhattacharya P 2010 Nano Lett. 10 3355
23. Sekiguchi H, Kishino K and Kikuchi A 2010 Appl. Phys. Lett. 96 231104
24. Nguyen H P T, Zhang S, Cui K, Han X, Fathololoumi S, Couillard M, Botton G and Mi Z 2011 Nano Lett. 11 1919
25. Chang Y L, Wang J L, Li F and Mi Z 2010 Appl. Phys. Lett. 96 013106
26. Chang S-W, Chuang S-L and Holonyak N Jr 2004 Phys. Rev. B 70 125312
27. Nguyen H P T, Cui K, Zhang S, Fathololoumi S and Mi Z 2011 Nanotechnology 22 445202
28. Meyaard D S, Lin G-B, Shan Q, Cho J, Schubert E F, Shim H, Kim M-H and Sone C 2011 Appl. Phys. Lett. 99 251115
29. Ryu H-Y, Shim J-I, Kim C-H, Choi J H, Jung H M, Noh M-S, Lee J-M and Nam E-S 2011 Photonics Technol. Lett. IEEE 23 1866
30. Masui H, Sonoda J, Pfaff N, Koslow I, Nakamura S and DenBaars S P 2008 J. Phys. D: Appl. Phys. 41 165105