Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure

Journal of Physics D: Applied Physics

Volumn 41, Issue 22, 2008, Pages

  Masui, Hisashi ^a   Yamada, Hisashi ^a,b   Iso, Kenji ^a,c   Nakamura, Shuji ^a   Denbaars, Steven P ^a  

^a University of California   (United States)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

^c Japan Pionics Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; CURRENT DENSITY; EMISSION SPECTROSCOPY; FUNCTIONS; INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT POLARIZATION; POLARIZATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

BAND FILLINGS; CURRENT DEPENDENCES; CURRENT INJECTIONS; DIRAC FUNCTIONS; EMISSION WAVELENGTHS; ENERGY DIFFERENCES; IN COMPOSITIONS; INDIUM COMPOSITIONS; INGAN/GAN; LIGHT EMITTING DIODE LEDS; M PLANES; MOMENTUM CONSERVATIONS; OPTICAL POLARIZATIONS; POLARIZED LIGHTS; SINGLE QUANTUM; STRONG CORRELATIONS; WELL STRUCTURES;

OPTICAL CORRELATION;

EID: 58149293775     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/22/225104     Document Type: Article

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