Efficiency and electron leakage characteristics in GaN-based light-emitting diodes without AlGaN electron-blocking-layer structures

IEEE Photonics Technology Letters

Volumn 23, Issue 24, 2011, Pages 1866-1868

  Ryu, Han Youl ^a   Shim, Jong In ^b   Kim, Cheol Hoi ^c   Choi, Jin Hyoung ^c   Jung, Hyun Min ^c   Noh, Min Soo ^c   Lee, Jong Moo ^d   Nam, Eun Soo ^d  

^a Inha University   (South Korea)

^b Hanyang University   (South Korea)

^c EpiValley Co Ltd   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

AlGaN; electron blocking layer (EBL); InGaN; light emitting diode (LED)

Indexed keywords

ACTIVE LAYER; ALGAN; ELECTRON BLOCKING LAYER (EBL); ELECTRON LEAKAGE; GAN-BASED LIGHT-EMITTING DIODES; HOLE INJECTION; INGAN; INTERLAYER THICKNESS; INTERNAL QUANTUM EFFICIENCY; MEASUREMENT RESULTS; PHOTOLUMINESCENCE MEASUREMENTS;

DIODES; EFFICIENCY; ELECTROLUMINESCENCE; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; QUANTUM EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 82155188542     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2170409     Document Type: Article

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