Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

Applied Physics Letters

Volumn 102, Issue 4, 2013, Pages

  Verma, Jai ^a   Kandaswamy, Prem Kumar ^a   Protasenko, Vladimir ^a   Verma, Amit ^a   Grace Xing, Huili ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; ALN; ALN BARRIERS; BAND ALIGNMENTS; CARRIER INJECTION; EFFECTIVE TOOL; GAN QUANTUM DOTS; HIGH-EFFICIENCY; HOT CARRIER INJECTION; LARGE LATTICE MISMATCH; OSCILLATOR STRENGTHS; P-TYPE LAYERS; POLARIZATION FIELD; QUANTUM CONFINED STARK EFFECT; ROOM TEMPERATURE; SHORT-WAVELENGTH; SHORT-WAVELENGTH EMISSIONS; STRANSKI-KRASTANOV GROWTH MODE; TUNNEL INJECTION; ULTRAVIOLET LIGHT-EMITTING DIODES;

CHARGE INJECTION; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; LIGHT SOURCES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84873592267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789512     Document Type: Article

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