Low-temperature solution-processed flexible solar cells based on (In,Ga)N nanocubes

ACS Applied Materials and Interfaces

Volumn 6, Issue 13, 2014, Pages 9925-9931

  Qaeed, M A ^a,c   Ibrahim, K ^a   Saron, K M A ^a,d   Ahmed, M A ^a   Allam, Nageh K ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b The American University in Cairo   (Egypt)

^c HODEIDAH UNIVERSITY   (Yemen)

^d National Center for Research Sudan   (Sudan)

Author keywords

(In,Ga)N; flexible; Hall measurements; low temperature; mobility; solar cell

Indexed keywords

CARRIER MOBILITY; ENERGY DISPERSIVE SPECTROSCOPY; FABRICATION; FLEXIBLE ELECTRONICS; HALL MOBILITY; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR DOPING; SOLAR CELLS; TEMPERATURE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

DEEP-LEVEL PHOTOLUMINESCENCE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FLEXIBLE; FLEXIBLE SOLAR CELLS; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; INDIUM GALLIUM NITRIDE; LOW TEMPERATURES;

INDIUM;

EID: 84904116894     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am502217b     Document Type: Article

References (39)

1. Nakamura, S.; Pearton, S.; Fasol, G. The Blue Laser Diode: The Complete Story. Springer: 2000.
2. 0.73N Thin Film Synthesized Using Electrochemical Etching Technique Int. J. Electrochem. Sci. 2012, 7, 10038-10046
3. Brandt, O.; Sun, Y. J.; Schonherr, H.-P.; Ploog, K. H.; Waltereit, P.; Lim, S.-H.; Speck, J. S. Improved Synthesis of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular-Beam Epitaxy Appl. Phys. Lett. 2003, 83, 90-92
4. Nakamura, S.; Senoh, M.; Nagahama, S. i.; Iwasa, N.; Yamada, T.; Matsushita, T.; Sugimoto, Y.; Kiyoku, H. Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Structure Laser Diodes Appl. Phys. Lett. 1996, 69, 4056-4058
5. Hwang, J.-W.; Campbell, J. P.; Kozubowski, J.; Hanson, S. A.; Evans, J. F.; Gladfelter, W. L. Topochemical Control in the Solid-State Conversion of Cyclotrigallazane Into Nanocrystalline Gallium Nitride Chem. Mater. 1995, 7, 517-525
6. Tang, T.; Han, S.; Jin, W.; Liu, X.; Li, C.; Zhang, D.; Zhou, C.; Chen, B.; Han, J.; Meyyapan, M. Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires J. Mater. Res. 2004, 19, 423-426
7. Xiao, J.; Xie, Y.; Tang, R.; Luo, W. Benzene Thermal Conversion to Nanocrystalline Indium Nitride from Sulfide at Low Temperature Inorg. Chem. 2003, 42, 107-111
8. Schwenzer, B.; Meier, C.; Masala, O.; Seshadri, R.; DenBaars, S. P.; Mishra, U. K. Synthesis of Luminescing (In,Ga)N Nanoparticles from an Inorganic Ammonium Fluoride Precursor J. Mater. Chem. 2005, 15, 1891-1895
9. Purdy, A. P. Ammonothermal Synthesis of Cubic Gallium Nitride Chem. Mater. 1999, 11, 1648-1651
10. Balkas, C. M.; Davis, R. F. Synthesis Routes and Characterization of High-Purity, Single-Phase Gallium Nitride Powders J. Am. Ceram. Soc. 1996, 79, 2309-2312
11. Benaissa, M.; Gonsalves, K.; Rangarajan, S. AlGaN Nanoparticle/Polymer Composite: Synthesis, Optical, and Structural Characterization Appl. Phys. Lett. 1997, 71, 3685-3687
12. 1-xN Powders Mater. Sci. Eng., B 2002, 90, 7-12
13. Wu, J. When Group-III Nitrides Go Infrared: New Properties and Perspectives J. Appl. Phys. 2009, 106, 01110
14. Gopalakrishnan, M.; Purushothaman, V.; Venkatesh, P. S.; Ramakrishnan, V.; Jeganathan, K. Structural and Optical Properties of GaN and InGaN Nanoparticles by Chemical Co-Precipitation Method Mater. Res. Bull. 2012, 47, 3323-3329
15. Qaeed, M.; Ibrahim, K.; Srivastava, R.; Ali, M.; Salhin, A. Structural and Optical Characterization of InGaN Nanoparticles Synthesized at Low Temperature Mater. Lett. 2013, 128-130
16. Ouyang, J.; Yang, Y. Conducting Polymer as Transparent Electric Glue Adv. Mater. 2006, 18, 2141-44
17. Xu, Z.; Shen, C.; Hou, Y.; Gao, H.; Sun, S. Oleylamine as Both Reducing Agent and Stabilizer in a Facile Synthesis of Magnetite Nanoparticles Chem. Mater. 2009, 21, 1778-1780
18. Qaeed, M.; Ibrahim, K.; Saron, K.; Salhin, A. Optical and Structural Properties of Indium Nitride Nanoparticles Synthesized by Chemical Method at Low Temperature Sol. Energy 2013, 97, 614-619
19. Kawai, Y.; Ohsuka, S.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I. In Thick InGaN Growth on Several Crystal Planes of ZnO Substrate by Metalorganic Vapor Phase Epitaxy Proc. SPIE 2008, 688904
20. Hahn, C.; Zhang, Z.; Fu, A.; Wu, C. H.; Hwang, Y. J.; Gargas, D. J.; Yang, P. Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes ACS Nano 2011, 5, 3970-3976
21. Guo, Y.; Liu, X.; Song, H.; Yang, A.; Xu, X.; Zheng, G.; Wei, H.; Yang, S.; Zhu, Q.; Wang, Z. A Study of Indium Incorporation in In-Rich InGaN Grown by MOVPE Appl. Surf. Sci. 2010, 256, 3352-3356
22. 1-x N (x= 0-0.4) and Fabrication of Homo-Junction Solar Cells J. Mater. Sci. Technol. 2012, 29 (2) 128-136
23. Mohanty, B. C.; Jo, Y. H.; Yeon, D. H.; Choi, I. J.; Cho, Y. S. Stress-Induced Anomalous Shift of Optical Band Gap in ZnO:Al Thin Films Appl. Phys. Lett. 2009, 95, 062103
24. Lyons, J.; Janotti, A.; Van de Walle, C. Carbon Impurities and the Yellow Luminescence in GaN Appl. Phys. Lett. 2010, 97, 152108
25. Stoica, T.; Meijers, R. J.; Calarco, R.; Richter, T.; Sutter, E.; Lüth, H. Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires Nano Lett. 2006, 6, 1541-1547
26. Komaki, H.; Katayama, R.; Onabe, K.; Ozeki, M.; Ikari, T. Nitrogen Supply Rate Dependence of InGaN Growth Properties, by RF-MBE J. Cryst. Growth 2007, 305, 12-18
27. Reiss, P.; Protiere, M.; Li, L. Core/Shell Semiconductor Nanocrystals Small 2009, 5, 154-168
28. Harima, H. Properties of GaN and Related Compounds Studied by Means of Raman Scattering J. Phys.: Condens. Matter 2002, 14, R967
29. Qaeed, M. A.; Ibrahim, K.; Saron, K. M. A.; Abdullah, Q. N.; Elfadill, N.; Abud, S.; Chahrour, K. The Effective Role of Time in Synthesising InN by Chemical Method at Low Temperature J. Mater. Sci.: Mater. Electron 2014, 25, 1376-1380
30. Correia, M.; Pereira, S.; Pereira, E.; Frandon, J.; Alves, E. Raman Study of the A 1 (LO) Phonon in Relaxed and Pseudomorphic InGaN Epilayers Appl. Phys. Lett. 2003, 83, 4761-4763
31. Pantha, B.; Sedhain, A.; Li, J.; Lin, J.; Jiang, H. Electrical and Optical Properties of p-Type InGaN Appl. Phys. Lett. 2009, 95, 261904
32. Chang, C.-A.; Tang, T.-Y.; Chang, P.-H.; Chen, N.-C.; Liang, C.-T. Magnesium Doping of In-Rich InGaN J. Appl. Phys. 2007, 46, 2840
33. Balkas, C. M.; Basceri, C.; Davis, R. F. Synthesis and Characterization of High Purity, Single Phase GaN Powder Powder Diffr. 1995, 10, 266-268
34. Breitenstein, O.; Bauer, J.; Lotnyk, A.; Wagner, J.-M. Defect Induced Non-Ideal Dark I-V Characteristics of Solar Cells Superlattices Microstruct. 2009, 45, 182-189
35. Saron, K.; Hashim, M.; Allam, N. K. Heteroepitaxial Growth of GaN/Si (111) Junctions in Ammonia-Free Atmosphere: Charge Transport, Optoelectronic, and Photovoltaic Properties J. Appl. Phys. 2013, 113, 124304
36. 1-xN (x = 0-0.4) and Fabrication of Homo-Junction Solar Cells J. Mater. Sci. Technol. 2012, 2, 128-136
37. Wu, M.-H.; Chang, S.-P.; Liao, W.-Y.; Chu, M.-T.; Chang, S.-J. Efficiency of GaN/InGaN Double-Heterojunction Photovoltaic Cells Under Concentrated Illumination Surf. Coat. Technol. 2013, 231, 253-256
38. Tseng, C.-Y.; Lee, C.-T. Improved Performance Mechanism of III-V Compound Triple-Junction Solar Cell Using Hybrid Electrode Structure Sol. Energy 2013, 89, 17-22
39. Doria, R. T.; Trevisol, R.; de Souza, M.; Pavanello, M. A. Impact of the Series Resistance in the IV Characteristics of Junctionless Nanowire Transistors and its Dependence on the Temperature J. Integr. Circuits Syst. 2012, 7, 121-129